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How a memristor behave within radio pulse? 


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A memristor can exhibit various behaviors within a radio pulse. Memristors can be utilized as radiofrequency (RF) switches, showcasing exceptional performance characteristics. Additionally, memristors can be integrated into chaotic systems, enhancing complexity and randomness of signals. When subjected to radiation, memristors in spiking neural networks may experience altered conductance states, affecting learning behavior. The impact of radiation on memristors can lead to changes in synaptic weights, influencing the network's ability to recognize patterns. Despite radiation-induced alterations, the network can recover and relearn patterns once radiation exposure ceases, with recovery time dependent on radiation flux, intensity, and duration. This demonstrates the resilience and adaptability of memristor-based networks in the face of external influences like radiation.

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Proceedings ArticleDOI
22 May 2016
10 Citations
A memristor functions as a radiofrequency switch in response to a radio pulse, exhibiting a high ON/OFF conductance ratio and excellent RF performance up to 110 GHz frequencies.
Radiation alters memristor state in neuromorphic circuits, affecting learning behavior. Recovery post-radiation is proportional to radiation flux, intensity, and duration, enabling pattern retention even after exposure.
Not addressed in the paper.
Memristors exhibit increased conductance during radiation exposure, affecting synaptic weights in neuromorphic circuits. The network can relearn patterns post-radiation, with recovery time dependent on radiation flux and duration.
Proceedings ArticleDOI
Olufemi A. Olumodeji, Massimo Gottardi 
28 May 2017
11 Citations
Not addressed in the paper.

Related Questions

Why is memristor endurance bad?5 answersMemristor endurance, or the ability of memristive devices to sustain repeated switching cycles without significant degradation, is compromised by several factors. One primary concern is the damage from the metallization step, which affects the reliability of 2D memristors, as the impact of metallization conditions and the thickness of MoS2 films on device metrics has shown significant effects on device endurance and reliability. Additionally, the presence of long bitlines and wordlines in memristive crossbar arrays introduces parasitic voltage drops, leading to current asymmetry and significant endurance variation, which can reduce the crossbar's lifetime if critical memristors are overutilized. The inherent defects and degradation of memristors, especially in the context of their use in adaptive chaotic synchronization schemes and crossbar architectures, further exacerbate endurance issues. Manufacturing process variability and limited read/write endurance are also critical drawbacks that threaten the future utilization of memristors, despite their many appealing characteristics. Interface engineering has been identified as a critical technique to address variation issues that obstruct the use of memristive devices, aiming to improve the uniformity and resistance ratio between high and low resistance states. Moreover, memristors based on 2D materials often suffer from poor endurance and retention due to material degradation during the formation/fusing processes of conductive filament channels within the switching media. The unintentional out-diffusion of atoms into the switching layer, as observed in devices with indium tin oxide (ITO) electrodes, can deteriorate the switching performance by affecting the conduction mechanism. Variabilities in memristors, both internal and external, significantly impact the performance of memristive neural networks, affecting machine learning applications. Lastly, the fundamental understanding of the switching mechanism in 2D memristors, including defect migration processes, is crucial for improving endurance, variability, resistance ratio, and scalability.
What are the potential benefits of using pulse-based direct digitization with memristors in various applications?5 answersPulse-based direct digitization with memristors offers significant advantages in various applications. Memristors exhibit powerful analog computing capabilities, making them promising for high-speed digital compressed sensing (CS) technologies. Additionally, memristive devices can be utilized for data encryption and mobile communication, with the ability to influence resistive switching controllably. Furthermore, memristors provide low power consumption, non-volatility, good scalability, and compatibility with CMOS technology, making them advantageous for memory design and digital circuit applications. In the realm of neural networks, memristor arrays enable parallel operations and memory-computation tasks, although variability challenges persist. Overall, pulse-based direct digitization with memristors presents a promising avenue for enhancing performance and efficiency across a wide range of applications.
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What are the impacts of pulse electromagnetic fields on neurons?5 answersPulsed electromagnetic fields (PEMFs) have been shown to have several impacts on neurons. PEMF exposure increases the functionality of adenosine receptors, specifically A2A and A3 receptors, in different neuronal cell types. It has been found that PEMFs can counteract hypoxia-induced apoptosis and reduce reactive oxygen species (ROS) production in neuronal-like cells. Additionally, PEMFs have a strong anti-inflammatory effect on microglial cells and can decrease the levels of pro-inflammatory mediators. In animal models of stroke, PEMFs exposure has been shown to reduce the size of the infarct area. Furthermore, PEMFs have been found to activate the Akt/Ras signaling pathway, resulting in the regulation of survival proteins and increased cell survival. Overall, these findings suggest that PEMFs have neuroprotective effects on neurons, reducing cell death and inflammation, and promoting cell survival.
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