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How can defects in semiconductor heterostructures be controlled? 


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Defects in semiconductor heterostructures can be controlled through various methods. One approach is to understand the temperature dependence of the charge-state transition level εα(q/q’), which determines the dopability of defects in semiconductors. By deriving basic formulas for temperature-dependent εα(q/q’), it has been found that the temperature dependence of εα(q/q’) can vary for different defects, becoming shallower, deeper, or remaining unchanged . Another method involves reducing defects through a controllable reduction process. For example, in the case of p-type delafossite CuCrO2 nanoparticles, the defects can be modulated by reducing nonstoichiometric CuII, which alters the concentration of positive charge carriers and modifies the conductive and reflective properties of the material . Additionally, deep learning algorithms have been used to automatically classify defects in semiconductor manufacturing processes, enhancing efficiency and productivity .

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The provided paper does not specifically mention how defects in semiconductor heterostructures can be controlled. The paper focuses on the development of a deep learning-based automatic defect classification technique for semiconductor manufacturing processes.
The provided paper does not specifically discuss the control of defects in semiconductor heterostructures. The paper focuses on the modulation of defects in p-type CuCrO2 nanoparticles through a reduction method.
The provided paper does not directly address how defects in semiconductor heterostructures can be controlled. The paper focuses on the temperature dependence of charge-state transition levels of defects in semiconductors.
Proceedings ArticleDOI
Yuan Hsu, Mochihiro Shimizu 
28 Apr 2023
The provided paper does not discuss the control of defects in semiconductor heterostructures. The paper focuses on surface treatment methods to reduce process defects in semiconductor circuits.

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