L
Laurent Cario
Researcher at University of Nantes
Publications - 178
Citations - 4860
Laurent Cario is an academic researcher from University of Nantes. The author has contributed to research in topics: Mott insulator & Charge density wave. The author has an hindex of 36, co-authored 171 publications receiving 4045 citations. Previous affiliations of Laurent Cario include North Carolina State University & University of Oxford.
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Self-Assembly and Characterization of Layered Double Hydroxide/DNA Hybrids
Léa Desigaux,Malha Ben Belkacem,Peggy Richard,Joël Cellier,Philippe Leone,Laurent Cario,Fabrice Leroux,Christine Taviot-Guého,Bruno Pitard +8 more
TL;DR: The results indicate that labile complexes resulting from the association of nucleic acids and inorganic materials can be obtained not only by anion exchange but also by a direct self-assembly route.
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A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator
Pablo Stoliar,Julien Tranchant,Benoit Corraze,Etienne Janod,Marie-Paule Besland,Federico Tesler,Marcelo J. Rozenberg,Laurent Cario +7 more
TL;DR: A simple two‐terminal device is introduced, which can implement the basic functions leaky integrate and fire of spiking neurons and is found that it is realized by the behavior of strongly correlated narrow‐gap Mott insulators subject to electric pulsing.
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Superconducting density of states and vortex cores of 2H-NbS2.
TL;DR: The hexagonal vortex lattice with radially symmetric vortices and a well-developed localized state at the vortex cores of the superconducting dichalcogenide 2H-NbS2 is observed, together with the charge density wave order, absent.
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Coherent long-range magnetic bound states in a superconductor
Gerbold Menard,Sébastien Guissart,Christophe Brun,Stéphane Pons,Stéphane Pons,Vasily S. Stolyarov,Vasily S. Stolyarov,François Debontridder,Matthieu V. Leclerc,Etienne Janod,Laurent Cario,Dimitri Roditchev,Dimitri Roditchev,Pascal Simon,Tristan Cren +14 more
TL;DR: Magnetic atoms embedded in a niobium selenide superconductor were shown to give rise to a long-range coherent bound state extending tens of nanometres.
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Resistive Switching in Mott Insulators and Correlated Systems
Etienne Janod,Julien Tranchant,Benoit Corraze,Madec Querré,Pablo Stoliar,Marcelo J. Rozenberg,Tristan Cren,Dimitri Roditchev,Vinh Ta Phuoc,Marie-Paule Besland,Laurent Cario +10 more
TL;DR: In this article, the authors focus on a broad class of resistive random access memories (ReRAM) where the active material is a Mott insulator or a correlated system.