How does the use of different materials and processes affect the likelihood of tunneling in semiconductor devices?
Best insight from top research papers
The use of different materials and processes can significantly affect the likelihood of tunneling in semiconductor devices. Researchers have explored various materials and device architectures to improve the characteristics of tunnel field-effect transistors (TFETs) . Material bandgap engineering has been employed to enhance the ability of TFETs to resist off-state leakage currents, by incorporating a material-based band offset component . The stoichiometry of semiconductor heterostructures also plays a role in the electron-hole dynamics and time-resolved optical responses in resonant tunneling devices . The composition of the devices, such as Sb-based tunneling devices, can lead to different time scales of current flux intensity compared to As-based devices . These findings highlight the importance of material selection and device design in controlling tunneling behavior in semiconductor devices.
Answers from top 5 papers
More filters
| Papers (5) | Insight |
|---|---|
| The paper discusses the role of stoichiometry and composition in Sb-based tunneling devices, highlighting the correlation between structural parameters, radiative recombination processes, and relaxation mechanisms. However, it does not directly address the likelihood of tunneling in semiconductor devices. | |
02 Jul 2023 | The provided paper does not directly address the likelihood of tunneling in semiconductor devices. |
| The paper discusses how using different materials and bandgap engineering techniques can enhance the ability of tunneling transistors to resist off-state leakage currents. It does not specifically mention the likelihood of tunneling in semiconductor devices. | |
| The answer to the query is not provided in the paper. The paper discusses the advantages and limitations of using different materials and device architectures in the design of Tunnel Field Effect Transistors (TFETs), but it does not specifically address how the use of different materials and processes affects the likelihood of tunneling in semiconductor devices. | |
| The answer to the query is not provided in the paper. The paper discusses the advantages and limitations of using different materials and device architectures in the design of Tunnel Field Effect Transistors (TFETs), but it does not specifically address how the use of different materials and processes affects the likelihood of tunneling in semiconductor devices. |
Related Questions
What is the mathematical formula for quantum tunneling?5 answersThe mathematical formula for quantum tunneling involves various aspects such as entropic tunneling time, quantum resonance mechanisms, and the quantum tunneling parameter. Entropic tunneling time considers the statistical description of tunneling, where thermal energy determines the tunneling time. Quantum resonance mechanisms lead to nonmonotonic decaying tails with step structures in eigenfunctions, showing stretched exponential decay as a function of the inverse Planck constant. The quantum tunneling parameter, QT, is defined as the product of mass, Planck's constant, and the square of the lowest eigenvalue, allowing control over the kinetic energy of quantum particles. These elements collectively contribute to formulating the mathematical framework for understanding and quantifying quantum tunneling phenomena.
Can EELS be used to analyse defects in ZnO or ZnS?5 answersEELS can be used to analyze defects in ZnO and ZnS materials. In the case of ZnO, EELS has been used to study the impact of ion implantation on the optoelectronic properties and lattice disorder. It has also been shown that EELS can be a good complement to X-ray energy-dispersive spectroscopy (EDS) for defect analysis in semiconductor devices, particularly in differentiating between oxidized metallic layers and bulky Si oxide. Additionally, EELS measurements conducted at lower accelerating voltages have demonstrated benefits such as reduced delocalization of inelastic scattering and reduced sample damage, making it suitable for defect analysis. Therefore, EELS is a versatile technique that can provide valuable insights into the composition, chemical state, and electronic state of ZnO and ZnS materials, making it a useful tool for defect analysis in these systems.
How does local force optimization affect the performance of tunneling operations?4 answersLocal force optimization, specifically in the context of tunneling operations, has been shown to have a significant impact on performance. The use of local optima networks generated through evolutionary algorithms based on the Generalised Asymmetric Partition Crossover has been found to smooth the landscape and improve the performance of the Asymmetric Travelling Salesman Problem. Additionally, the tunneling algorithm, an extension of GENET for optimization, has demonstrated outstanding performance in escaping local minima in constraint satisfaction optimization problems, partial constraint satisfaction problems, radio frequency allocation problems, and traveling salesman problems. The effectiveness of the approach is not limited to specific systems or noise types, making it applicable to any two-qubit system and noise model. Overall, local force optimization techniques have shown promise in improving the performance of tunneling operations in various problem domains.
How does the integration of MIS tunnel diodes in DRAM bit cells affect the memory's performance and reliability?5 answersThe integration of metal-insulator-semiconductor (MIS) tunnel diodes in dynamic random access memory (DRAM) bit cells has been shown to improve the memory's performance and reliability. The use of oxide local thinning (OLT) in MIS tunnel diodes leads to a significant increase in the read current window, resulting in improved current two states characteristics. Additionally, the use of a MIS source/drain (S/D) contact structure in DRAM cells enhances retention and write/read characteristics, leading to shorter write time and charge-sharing time. Trench MIS tunnel diodes have also been investigated and found to have lower reverse bias current and stronger transient current compared to traditional planar structure MIS tunnel diodes, making them potential memory devices. Furthermore, the integration of tunnel diodes in RRAM bit cells, such as tunnel source MOSFETs, optimizes array operations and enables control of current compliance in the SET direction and maximization of current in the RESET direction.
What are the effects of quantum confinement, tunneling, and Coulomb interactions in organic semiconductors?5 answersQuantum confinement, tunneling, and Coulomb interactions have various effects in organic semiconductors. The band structure of organic semiconductors can be tuned using long-range Coulomb interactions, which have been neglected in discussions of electronic states. In semiconductor structures, Coulomb interactions between electron densities can lead to important nonlinear effects in carrier dynamics, resulting in the emergence of terahertz electromagnetic radiation. Similarly, in a semiconductor superlattice, Coulomb interactions between electron-hole gases can generate terahertz electromagnetic radiation. Quantum confinement in semiconductor structures, such as double interface heterostructure quantum wells and free-standing quantum wells, affects the anharmonic decay transition probability of phonons, which is important for hotspot formation and thermal resistivity. Overall, these effects of quantum confinement, tunneling, and Coulomb interactions play a significant role in the behavior and properties of organic semiconductors.
What are the advantages and disadvantages of using different materials for the HTL layer?3 answersDifferent materials for the hole transport layer (HTL) in optoelectronic devices have their own advantages and disadvantages. In the case of CdSe/ZnS quantum-dot LEDs (QLEDs), poly(9-vinylcarbazole) (PVK) provides the highest luminance but the smallest modulation bandwidth, while poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine) (TFB) provides the lowest luminance but the largest bandwidth. For perovskite solar cells (PSCs), MoS2 nanosheets combined with Poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA) as a double-layer HTL improves power conversion efficiency (PCE) and long-term stability compared to using PTAA alone. In CsPbI2Br-based PSCs, the use of undoped polymers D18 and D18-Cl as HTLs results in high efficiency and impressive thermal stability. In perovskite light-emitting diodes (PeLEDs), a cross-linked HTL improves hole-injection efficiency and facilitates the formation of smooth perovskite layers. Overall, the choice of HTL material depends on the specific device and desired performance characteristics.