Incorporation of MACl induce n-type doping of perovskite interface?
Best insight from top research papers
The incorporation of MACl has been shown to induce n-type doping of the perovskite interface in several studies. The addition of MACl in perovskite precursor has been found to accelerate charge carriers' bulk diffusion in perovskite and interfacial transfer in perovskite/SnO2 heterojunction, while decelerating back charge recombination from SnO2 to perovskite. This is attributed to larger grains with fewer grain boundaries and defect sites induced by MACl doping, resulting in improved optoelectronic properties and a higher conversion efficiency of perovskite solar cells. In another study, n-type doping of SnO2 was achieved using a triphenylphosphine oxide molecule, which enhanced the conductivity and decreased the energy barrier at the SnO2/perovskite interface, leading to an increase in the conversion efficiency of perovskite solar cells. Therefore, the incorporation of MACl and other dopant molecules has been shown to induce n-type doping of the perovskite interface, improving the performance of perovskite solar cells.
Answers from top 5 papers
More filters
| Papers (5) | Insight |
|---|---|
| The provided paper does not mention the incorporation of MACl inducing n-type doping of the perovskite interface. | |
134 Citations | The provided paper does not mention the incorporation of MACl or its effect on n-type doping of the perovskite interface. |
42 Citations | The provided paper does not mention the incorporation of MACl or its effect on n-type doping of the perovskite interface. The paper focuses on n-type doping of a semi-conducting polymer used as an electron-transporting layer in perovskite solar cells. |
44 Citations | The paper does not explicitly mention whether the incorporation of MACl induces n-type doping of the perovskite interface. |
| The paper does not directly mention whether the incorporation of MACl induces n-type doping of the perovskite interface. |
Related Questions
Doping transition metal at b-site of halide perovskite5 answersDoping transition metals at the B-site of metal halide perovskites has been explored in several studies. Yang et al. developed a method to exchange B-site cations in perovskites using metal carboxylate solutions, allowing for fast and efficient doping at room temperature. Lu et al. reviewed the effects of A-site, B-site, and X-site ionic doping and substitution on the optoelectronic properties of perovskite nanocrystals, including the B-site doping of colloidal perovskite nanocrystals. Somaily investigated the structure-property relationship of A-site substituted titanates and manganites, including the doping of A-site Sr ions with Ba ions to promote ferroelectricity. Sampson et al. computationally and experimentally explored the substitution of transition metals on the Pb site of MAPbX3 perovskites, finding that Co-substituted MAPbBr3 showed promising mid-gap density of states for potential application in intermediate band photovoltaics. Yin et al. demonstrated the dominant PL quenching/enhancing centers in Bi3+/Ce3+-doped CsPbBr3 perovskite nanocrystals, providing insights into the mechanism of trivalent metal-ion doping effect.
Does doping improve or reduce the stability of perovskites?5 answersDoping can both improve and reduce the stability of perovskites, depending on the specific doping strategy and the type of perovskite material. Interstitial doping with a multivalent alkali metal cation has been found to enhance the performance and stability of metal halide perovskite solar cells. Doping two-dimensional Sn-based perovskite with SnI4 has been shown to increase the electrical conductivity and improve the film morphology, leading to reduced trap states. Doping tin halide perovskite with MnCl2 has the potential to improve stability and reduce the formation of SnO2, making it promising for the development of stable tin perovskite solar cells. On the other hand, high entropy doping of Ba0.5Sr0.5Co0.8Fe0.2O3-δ perovskite can improve stability by inhibiting phase transition. Overall, doping strategies can be effective in improving the stability of perovskites, but the specific effects depend on the doping elements and their interactions with the perovskite structure.
What are the challenges to using interface engineering to improve the stability of slot die perovskite solar cells?3 answersInterface engineering is a promising approach to improve the stability of slot die perovskite solar cells. However, there are several challenges that need to be addressed. One challenge is the need to construct a thin layer of a few nanometers that can delay ion migration and impede chemical reactions simultaneously. Another challenge is the issue of stability, as perovskite solar cells are prone to degradation over time. Additionally, the presence of interfacial defects between the perovskite and hole transporting layer can lead to nonradiative recombination and reduced efficiency. Furthermore, the complicated ink chemistry and film formation in slot-die coating can pose obstacles to scaling up devices. Finally, the lack of stability and reliability in perovskite solar cells remains a challenge for commercialization, and strategies such as interfacial and structural engineering need to be further explored.
How can interface engineering be used to improve the stability of slot die perovskite solar cells?3 answersInterface engineering can be used to improve the stability of slot die perovskite solar cells. One approach is to modify the interface between the perovskite layers and the silicon cells in tandem solar cells. This can be done by using an ionic liquid, piperazinium iodide, which improves band alignment and enhances charge extraction at the interface, resulting in higher open-circuit voltages and improved efficiency. Another method is to add metal phthalocyanines (MPcs) with decaphenylcyclopentasilane (DPPS) to the perovskite layer. The addition of MPcs improves the microstructure of the perovskite film, leading to improved photovoltaic properties such as open-circuit voltage, fill factor, and photoconversion efficiency. Additionally, integrating compact barriers into the devices can protect the perovskite absorber and electrode. ZrNx barrier films with high amorphization have been shown to delay ion migration and impede chemical reactions, resulting in improved operational stability of perovskite solar cells.
How does interface engineering affect the performance of slot die perovskite solar cells?4 answersInterface engineering plays a crucial role in improving the performance of slot die perovskite solar cells (PSCs). It can enhance the stability, photovoltaic properties, charge transfer, and charge recombination resistance of PSCs. Various materials, such as 8-Oxychinoline (8-Oxin), [2‐(9H‐carbazol‐9‐yl)ethyl]phosphonic acid (CEPA), MXenes, and L‐aspartic acid (LAA), have been used for interface engineering. These materials reduce charge transfer resistance, increase charge recombination resistance, passivate defects, manipulate energy-level alignment, induce molecular interaction, and optimize the ETL/perovskite interface. As a result, the power conversion efficiency (PCE) of PSCs can be significantly improved. For example, PSCs treated with 8-Oxin achieved a champion PCE of 19.03%, while CEPA-treated PSCs reached a PCE of 23.6%. Additionally, the stability of PSCs can be enhanced, as demonstrated by the improved stability performance of LAA-modified PSCs. Overall, interface engineering is a promising approach to enhance the performance of slot die perovskite solar cells.
What are the effects of different interface engineering strategies on the performance of slot die perovskite solar cells?5 answersDifferent interface engineering strategies have been explored to improve the performance of slot die perovskite solar cells (PSCs). One strategy involves tailoring the interface between the perovskite and hole transporting layer (HTL) using a multifunctional ligand, which enhances the long-term operational and thermal stability of PSCs. Another strategy involves the use of MXenes, two-dimensional materials, as additives or interfacial layers in PSCs. MXenes can tune the work function, reduce interfacial recombination resistance, and provide smooth charge transfer paths, leading to enhanced conductivity and operational stability. Additionally, the choice of perovskite precursor solvents and deposition temperatures can significantly impact perovskite-layer formation and device performance. For slot-die coating based PSCs, using a solvent mixture of DMSO and DMF and a deposition temperature of 130 °C has been found to provide better solar cell performance. Furthermore, the modification of the electron transport layer (ETL)/perovskite interface using amino acids has been shown to reduce defects and improve the quality of the perovskite crystal, resulting in higher power conversion efficiency and stability.