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What are the advantages of using 2D van der Waals magnets in MRAM devices? 


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2D van der Waals magnets offer several advantages for MRAM devices. Firstly, they have a broad range of electronic, magnetic, and topological properties, making them promising for energy-efficient spintronic applications . Secondly, these magnets can be controlled and manipulated using ultrafast laser pulses, allowing for low-power consumption and fast demagnetization processes . Additionally, the interplay between light and spin properties in 2D van der Waals magnets can be explored, leading to the generation of different spin textures and reversible transformations between them . This laser-driven control of spin textures opens up possibilities for ultrafast reconfigurable architectures at the atomistic level . Overall, the advantages of using 2D van der Waals magnets in MRAM devices include their diverse properties, low-power consumption, fast operation, and potential for reconfigurable architectures.

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The provided paper does not discuss the advantages of using 2D van der Waals magnets in MRAM devices.
The provided paper does not mention the advantages of using 2D van der Waals magnets in MRAM devices.
The provided paper does not mention the advantages of using 2D van der Waals magnets in MRAM devices.
The paper does not specifically mention the advantages of using 2D van der Waals magnets in MRAM devices.

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Is there below 10 nm MRAM? if yes, how small?5 answersYes, there is MRAM below 10 nm. The abstract by Popov et al. describes a compact model of a nano-sized magnetic junction for STT-MRAM at technology nodes beyond 90 nm, where the impact of thermal stability factor and magnetotransport size effects should be taken into account at sub-20 nm dimensions. The model shows that the spatial quantization of the spin-transfer torques in the magnetic nanobridge based on spin-valve junction (SVJ) leads to higher switching speed compared to using magnetic tunnel junctions (MTJ) at the same design rule. This indicates that MRAM can be scaled down to sizes below 10 nm.
Can parameters of a magnetic tunnel junction be changed to optimize for the specific application of MRAM?5 answersYes, the parameters of a magnetic tunnel junction (MTJ) can be changed to optimize for the specific application of MRAM. In one study, the oxide thickness of the MTJ was varied to determine its impact on important parameters such as tunnel magnetoresistance (TMR), resistance, and spin transfer torque (STT) components. The results showed that an oxide thickness of [Formula: see text][Formula: see text]nm resulted in better TMR ratio, resistance, and STT-components. This optimization of the oxide thickness can help improve the performance and reliability of the MTJ in MRAM applications. Additionally, another study compared the switching performance of two-terminal spin transfer torque MRAM (STT-MRAM) devices with double spin-magnetic tunnel junctions (DS-MTJs) to three-terminal spin-orbit torque MRAM (SOT-MRAM) devices. The DS-MTJs showed a reduction in switching current density and power consumption compared to SOT-MRAM devices with similar energy barriers. This suggests that the parameters of the MTJ can be adjusted to optimize the performance and energy efficiency of MRAM devices.

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