What are the current research efforts aimed at understanding and optimizing the tunneling effect in semiconductors for advanced technologies?
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Current research efforts are focused on understanding and optimizing the tunneling effect in semiconductors for advanced technologies. One area of study is the investigation of the electrical properties of ferroelectric tunnel junction (FTJ) devices using Hafnia ferroelectric materials . Another research direction is the exploration of Junctionless Tunnelling Field Effect Transistors (JLTFETs) to overcome the limitations of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) . Additionally, there is ongoing research on the quantum tunneling process in semiconductors, proposing mechanisms based on electron/hole annihilation and creation with the participation of virtual photons . The use of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) is also contributing to the understanding of semiconductor heterojunctions (SHs) and their band alignment, interface states, interface coupling, and carrier transport . Furthermore, electron transport in tunneling barriers is being investigated through the measurement of shot noise in spin Esaki diode junctions, allowing for the evaluation of different types of conduction processes .
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| Papers (5) | Insight |
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5 Citations | The provided paper investigates the tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode junction, but it does not discuss current research efforts aimed at understanding and optimizing the tunneling effect in semiconductors for advanced technologies. |
7 Citations | The provided paper discusses the recent progress in using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to study semiconductor heterojunctions (SHs), but it does not specifically mention research efforts aimed at understanding and optimizing the tunneling effect in semiconductors for advanced technologies. |
5 Citations | The provided paper does not discuss current research efforts aimed at understanding and optimizing the tunneling effect in semiconductors for advanced technologies. |
09 Nov 2020 | The provided paper focuses on the performance enhancement of Ge/GaAs Heterostructure Junctionless Tunnelling Field Effect Transistor (H-JLTFET) by reducing the tunneling barrier and analyzing different device parameters. It does not specifically mention current research efforts aimed at understanding and optimizing the tunneling effect in semiconductors for advanced technologies. |
39 Citations | The provided paper focuses on understanding and optimizing the tunneling electroresistance (TER) effect in Pt/Hf0.5Zr0.5O2/TiN ferroelectric tunnel junction memory devices, rather than semiconductors. |
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