What are the factors that affect the IDSS of a MOSFET?
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The factors that affect the IDSS of a MOSFET include the gate-voltage-dependent mobility, the accuracy of switching characterization, unclamped inductive switching (UIS) and diode recovery stress (DRS) failure modes, and the gate tunneling current. The gate-voltage-dependent mobility has a large effect on the (I ds, V g) characteristic but only a small effect on the thermal noise parameter α sat = R n g max . The accuracy of switching characterization is influenced by factors such as the signal zero bias of drain-source voltage and current, time delay between Vds and Ids, and sampling frequency and bandwidth . UIS and DRS failure modes are affected by stored minority carrier charge in the MOSFET source-drain diode . The gate tunneling current is impacted by energy quantization, gate leakage, and channel length-modulation and drain-induced barrier lowering effects . The subthreshold swing of a MOSFET can decrease as gate length is reduced before increasing catastrophically due to punchthrough current .
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| The provided paper does not mention the factor that affects the IDSS (drain-to-source current at zero gate voltage) of a MOSFET. The paper discusses gate tunneling current, transconductance, and output conductance, but does not specifically mention IDSS. | |
21 Citations | The provided paper does not mention the factors that affect the IDSS (drain-to-source current at zero gate voltage) of a MOSFET. |
28 Oct 2022 | The provided paper does not mention anything about the IDSS of a MOSFET. |
6 Citations | The provided paper does not mention the factors that affect the IDSS of a MOSFET. The paper focuses on the gate-voltage-dependent mobility and its effect on thermal noise in MOSFETs. |
| The provided paper does not mention the factors that affect the IDSS of a MOSFET. |
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