How does the process of making silicon rubber differ from other types of rubber manufacturing?5 answersThe process of making silicone rubber differs from other types of rubber manufacturing due to specific techniques and components involved. In silicone rubber production, processes like designing silicone rubber mould plates, using slicers for precise cutting, adding compounding agents like talc, and incorporating semiconductor glaze layers are unique aspects not commonly found in traditional rubber manufacturing processes. Additionally, the use of specific equipment like plasticators, rubber mixing machines, and calenders or press-out machines distinguishes silicone rubber production from other rubber manufacturing methods. The incorporation of washing processes in the preparation of silicone rubber bases for double-component silicone rubber further enhances the performance and appearance of the final product. These specialized steps and components contribute to the distinct properties and applications of silicone rubber compared to other types of rubber.
In what ways does the wet etch rate vary as a function of temperature?4 answersThe wet etch rate of silicon varies as a function of temperature. Increasing the temperature of the etchant solution can lead to an increase in the etch rate. This is observed in both pure potassium hydroxide solution (KOH) and tetramethylammonium hydroxide (TMAH) solutions. Elevating the temperature of the etchant to its boiling point can significantly increase the etch rate. Additionally, the etch rate of sapphire is also affected by temperature, with higher temperatures resulting in higher etch rates. The effect of temperature on the etch rate is also observed in the etching of nitride and oxide layers in Buffered Oxide Etch (BOE) solution, where higher temperatures improve the etching process in terms of both time needed and mask structure. Overall, increasing the temperature of the etchant solution can enhance the etch rate in various materials.
What are the main challenges in etching SiC wafers?3 answersThe main challenges in etching SiC wafers include the development of a fast and scalable etching process that can produce a sub-nanometer roughness semiconductor surface while reducing the total thickness variation across a wafer. Additionally, SiC is nearly inert with respect to wet-etching, so predominantly dry-etching techniques are used, but these techniques may not provide the desired etching contrasts. Furthermore, the increasing thinness of wafers poses challenges during transport and the backgrinding process, leading to wafer warpage. Lastly, as wafers become thinner, traditional blade dicing processes encounter yield issues, and alternative methods such as laser grooving need to be explored.
How can striations be minimized in TSV etch?5 answersStriations in TSV etch can be minimized through various methods. One approach is to use reduced gas flow rates, which has been shown to improve the sustainability of the etch process and reduce sidewall roughness. Another method is the application of space alternated phase shift (SAPS) megasonic technology for post-etch cleaning. This technology provides uniform sonic energy on each point of the wafer, resulting in improved electrical performance and enhanced cleans effectiveness. An enhanced rapid alternating process (RAP) combined with a proprietary gas injection architecture can also help control scallop sizes and ensure uniformity of depth in the etch process. Additionally, a wet etch process using a selective etch chemistry with high silicon-etch selectivity and improved etch rate can be used as a cost-effective alternative to polish/plasma etch TSV reveal process. Optimization of the etch process and characterization of TSV profiles can further contribute to minimizing striations in TSV etch.
Which is the charge transport mechanism in silicon nanoparticles films?5 answersThe charge transport mechanism in silicon nanoparticles films is attributed to space-charge-limited current transport, which leads to pronounced hysteretic current-voltage characteristics. Additionally, the transport mechanisms in amorphous SiO2 films with embedded Ge nanoparticles involve hopping on localized states in a band near Fermi level and charge excitation to the extended states at the mobility edge.
Will silicon nitride layer be etched by TMAH solution?4 answersSilicon nitride can be etched by TMAH solution.