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What is the detailed mechanism for TMAH to etch silicon? 


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Tetramethyl ammonium hydroxide (TMAH) is commonly used to etch silicon. The etching mechanism involves the interaction of TMAH with silicon and other components in the solution. TMAH solutions containing surfactant and alcohol additives have been studied, and the presence of these additives affects the etching rates and surface morphologies of silicon . The addition of alcohol, especially butanol-2, to a TMAH solution improves the surface finish of the etched silicon . TMA+ ions in the TMAH solution increase the wettability of the textured surface, resulting in the formation of uniform pyramids during etching . Surfactant-modified TMAH is used for etching in the fabrication process of a capacitive MEMS accelerometer, as it provides control over the spring thickness and minimizes undercutting at the mass corner . TMAH solutions containing Si and oxidizing agents can be used for silicon anisotropic etching, and the formation of micropyramids can be controlled by adjusting the etch rate ratio of different crystal orientations . Ultrasonic vibration and the use of additives in TMAH solutions improve surface quality during silicon etching .

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The detailed mechanism for TMAH to etch silicon is not provided in the paper. The paper focuses on investigating the influence of etchant concentration, dissolving silicon content, and additives during silicon anisotropic etching in TMAH.
The detailed mechanism for TMAH to etch silicon is not provided in the paper.
The detailed mechanism for TMAH to etch silicon is not mentioned in the provided paper.
The detailed mechanism for TMAH to etch silicon is not provided in the paper.

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In what ways does the wet etch rate vary as a function of temperature?4 answersThe wet etch rate of silicon varies as a function of temperature. Increasing the temperature of the etchant solution can lead to an increase in the etch rate. This is observed in both pure potassium hydroxide solution (KOH) and tetramethylammonium hydroxide (TMAH) solutions. Elevating the temperature of the etchant to its boiling point can significantly increase the etch rate. Additionally, the etch rate of sapphire is also affected by temperature, with higher temperatures resulting in higher etch rates. The effect of temperature on the etch rate is also observed in the etching of nitride and oxide layers in Buffered Oxide Etch (BOE) solution, where higher temperatures improve the etching process in terms of both time needed and mask structure. Overall, increasing the temperature of the etchant solution can enhance the etch rate in various materials.
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