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Therefore, this is a useful method to study the growth of CVD diamond thin films.
Nevertheless, these new CVD-grown diamonds can be identified on the basis of certain characteristic gemological and spectroscopic features.
Based on the N-distribution observed in the as-grown crystals, we propose a simple method to distinguish natural diamonds and man-made CVD SCDs.
Therefore, the timely characterization of these synthetic diamonds is critical to the gem industry.
Results of transient-current measurements on single crystal CVD diamonds, which are used to determine the charge carrier mobility and lifetime, show the excellent electrical properties of this material.
We demonstrate that CVD diamonds can be used in diamond anvil cells to reach pressures of nearly 200 GPa.
Overall, the measurements confirm the excellent transport and emission properties of single-crystal CVD diamond, as compared to polycrystalline CVD diamond films studied previously.
Finally, it is suggested that the defects characteristic of CVD diamonds may be caused by double bonds of various forms.
Our results suggest that using FT-IR combined with UV fluorescent images, PL, and CL analysis might be an appropriate method for identifying CVD diamonds.