Why nanorods agglomerate at higher doping concentration in bet ga2O3?
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Nanorods tend to agglomerate at higher doping concentrations in beta Ga2O3 due to the influence of the doping material on the interfacial interactions and growth mechanisms . The presence of dopants like In or Ga affects the surface properties and growth behavior of the nanorods, leading to agglomeration tendencies . Additionally, the increase in doping concentration can alter the morphology and structure of the nanorods, promoting agglomeration as observed in the SEM images. This phenomenon is crucial to understand for optimizing the fabrication processes of doped Ga2O3 nanorods to prevent agglomeration and enhance their performance in various applications, such as photodetectors .
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Open access•Journal Article 8 Citations | Higher doping concentration in In-doped Ga2O3 nanobelts can lead to nanorod agglomeration due to increased interactions between doped atoms, affecting morphology and performance. |
87 Citations | At higher doping concentrations, nanorods agglomerate due to increased interactions between doped atoms, leading to clustering, as observed in In-doped Ga2O3 nanobelts. |
Open access•Dissertation 24 Aug 2018 2 Citations | At higher Ga doping concentrations in ZnO, nanorods agglomerate due to increased growth parameters, leading to enlarged particles on nano-spherical bases, as observed in the study. |
Not addressed in the paper. | |
3 Citations | Higher doping concentration leads to nanorod agglomeration in β-Ga2O3 due to increased oxygen vacancy concentration, affecting interfacial carrier transfer and reducing photoresponse in deep UV photodetectors. |
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