Why VTFET model is better?
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The VTFET model is considered better because it offers improved device performance and is suitable for various applications. The L-NC-DT-VTFET design maximizes vertical tunnelling over corner tunnelling, resulting in better performance for high-performance, low-power applications . The Graphene Channel Double Gate Dual Gate Material VTFET shows better results in DC characteristics and is a promising candidate for analog and high-frequency range applications . The VTFET with a V-shaped groove in the top junction region provides improved device performance . The CP-FG-VTFET is a promising device in terms of linearity and sensitivity for biosensor applications . The double gate vertical TFET using hetero-dielectric buried oxide (HDB) improves linearity performance for high-frequency applications .
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2 Citations | The L-NC-DT-VTFET model is better because it maximizes vertical tunnelling over corner tunnelling, making it suitable for high-performance, low-power applications. |
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