Showing papers on "Amorphous silicon published in 1969"

Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide

Abstract: The $g$ values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a microcrystalline model.

Evidence of Voids Within the As-Deposited Structure of Glassy Silicon

Abstract: We present electron diffraction data from amorphous silicon which cannot be reconciled with the intensity profiles derived from small-crystallite models based on the diamond structure. Our diffraction patterns do reveal a pronounced low-angle scattering which anneals out on progressive heating and is indicative of actual void spaces, or regions of distinctly deficient density, in the films. These regions may be responsible for the recent observations of Brodsky and Title on surface states within the bulk of amorphous Si.

Pseudo‐kikuchi pattern degradation by a thin amorphous silicon film

Abstract: Measurements are reported which show that a few tens of angstroms of an amorphous adlayer of silicon on a single‐crystal (111) silicon surface produces a measurable degradation in the pseudo‐Kikuchi backscattered electron pattern of this surface. Normalized pattern quality, as defined in this work, is shown to decrease rapidly with adlayer film thickness and to become effectively zero at 350 A for a primary electron beam accelerating voltage of 21.3 kV. At 5 kV, the normalized pattern quality was effectively zero for all measurable film thicknesses (thickness measurement limit was ∼20 ± 20 A).