Showing papers on "Atomic layer deposition published in 1984"
Patent•
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TL;DR: In this paper, a thin film deposition apparatus is proposed, in which means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other.
Abstract: In a thin film deposition apparatus, means for depositing a film on a substrate and means for etching the deposited film to make flat the surface thereof, are provided in a reaction vessel independently of each other. This apparatus can rapidly deposit the film without rising the temperature of the substrate excessively. Further, since the deposition means and etching means are independent of each other, the deposition of a film on the substrate and the planarization of the surface of the deposited film can be achieved under various conditions.
57 citations
TL;DR: Recent trends in low pressure chemical vapour deposition (LPCVD) include the use of methods for initiating the deposition process other than thermal irradiation as discussed by the authors, which is a technique with a number of practical advantages and with possibility of initiating novel reactions.
11 citations
IBM1
TL;DR: In this paper, a method for preventing void formation in polycides is proposed, which involves deposition of a thin silicon layer onto the existing two-layer polysilicon material, designed to provide some of the silicon required for oxidation during the initial stages of self-passivation.
Abstract: Polycides, composite wiring/electrode films formed by depositing a refractory metal silicide such as WSi 2 , MoSi 2 , or TaSi 2 atop a polysilicon film [1]-[4], are finding their way into IC technologies as low-resistivity electrodes/interconnects. One of the desirable features of polycide composite films is their ability for self-passivation through thermal oxidation. In some cases, however, oxidation of the two-layer materials results in the formation of large "voids" in the polysilicon film (bottom layer in the polycide) [5], [6]. A method for preventing this void formation has been found. The solution involves deposition of a thin silicon layer onto the existing two-layer material. The additional layer is designed to provide some of the silicon required for oxidation during the initial stages of self-passivation. In cases where over 200 nm of SiO 2 were grown atop a WSi 2 polycide, a silicon layer as thin as 15-nm prevented void formation.
9 citations