Showing papers on "Barrier layer published in 1980"

High bandwidth optical waveguide

Abstract: An optical waveguide filament comprising a cladding layer, a core and a barrier layer disposed between the core and cladding. The barrier layer comprises silica doped with B 2 O 3 , P 2 O 5 and GeO 2 . The core consists of an inner region and an outer region, the boundary between which is referred to as the core break-point. In the outer region of the core, the concentration of B 2 O 3 decreases linearly from its barrier layer level to zero at the core break-point, the P 2 O 5 increases at a rapid rate from the barrier layer level to a first concentration level at the core break-point and the GeO 2 remains at a constant value between zero and the barrier level. In the outer region of the core, the GeO 2 increases from some level up to the barrier layer level to a greater value at the filament axis in a power law fashion. The P 2 O 5 also increases in a power law fashion from the value thereof at the core break-point to a higher value at the filament axis, the increase in concentration of P 2 O 5 in the outer core region increasing at a rate greater than the concentration of P 2 O 5 would increase if the power law P 2 O 5 gradient extended into the outer core region.

Behavior of Sulfate Ions daring Formation of Anodic Oxide Film on Aluminium

Abstract: The incorporation of sulfate into anodic film formed on aluminium in an H2SO4–MgSO4 solution was investigated by infrared spectroanalysis using the compensation method. The sulfate content of the film was very small at the initial stage of anodizing, but increased with time to a nearly constant value. This result is explained in terms of the variation of strength of electric field and the mobility of each anion in the barrier layer. The distribution of sulfate across the cell wall also was examined. The sulfate content was relatively small near the wall/solution interface, but increased with the distance across the wall from the surface, reached a maximum value on the intermediate layer between the wall/solution interface and the cell boundary, and decreased gradually. Such distribution is considered to be similar to that across the barrier layer. The SO4 distribution and the transfer of anions from the barrier layer to the porous layer are explained.

Coated metal electrode with improved barrier layer

Abstract: An electrode for use in electrolytic processes comprises a substrate of film-forming metal such as titanium having a porous electrocatalytic coating comprising at least one platinum-group metal and/or oxide thereof possibly mixed with other metal oxides, in an amount of at least about 2 g/m 2 of the platinum-group metal(s) per projected surface area of the substrate. Below the coating is a preformed barrier layer constituted by a surface oxide film grown up from the substrate. This preformed barrier layer has rhodium and/or iridium as metal or compound incorporated in the surface oxide film during formation thereof in an amount of up to 1 g/m 2 (as metal) per projected surface area of the substrate.

Cadmium telluride photovoltaic cells

Abstract: Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a conductive substrate, preferbaly comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate. The cell further includes a rectifying barrier layer which may be a Schottky barrier. The film is electrodeposited on the substrate surface and the substrate materials and electrodeposition conditions are controlled so as to produce a substantially stoichiometric deposit. Preferably, the film or cell is subsequently treated to enhance its efficiency.

Heat transfer barrier label

Abstract: Product and process for heat transfer labeling. A transfer layer containing a design print is superimposed upon a contoured release layer that is desirably imprinted on a carrier. When the carrier, together with the release layer and the transfer layer are applied to an object to be labeled and heated, both the release layer and the transfer layer become molten and the transfer layer becomes adhered to the object being labeled. The release layer and the transfer layer are immiscible when in a molten state. The desired immisciblity can be achieved by the inclusion of a barrier layer between the transfer layer containing the design print and the release layer.

High rate MCVD

Abstract: We have fabricated optical fibers using the MCVD process at a deposition rate of 0.9 grams/minute for doped silica glasses. This result has been achieved by reacting chlorides flowing at 8 grams/minute in a large diameter thin wall silica support tube using a broad hot zone torch. The efficiency of particle collection has been enhanced by water cooling the support tube downstream from the torch thereby shortening the soot trajectory to the inside wall surface and increasing the particle collection as predicted from previous studies of the thermophoretic forces. The broad hot zone is necessary for both the chloride reaction at these high flow rates and the sintering of the resulting thick particulate layers. The deposition efficiency for SiO 2 remains on the order of 45% or lower resulting in a considerable quantity of undeposited soot. This is effectively removed using a modified “dust catcher” avoiding this potential limitation to the number of deposit passes possible. A further study of the interdependence of torch traverse speed, deposition temperature, dopant incorporation and deposit taper has resulted in a multimode gradient index GeO 2 P 2 O 5 SiO 2 core, B 2 O 3 P 2 O 5 SiO 2 barrier layer fiber deposited at an average rate of 0.9 grams/minute with a minimum loss of 2dB/km at 1.3 microns and a 1.39 micron OH peak of 4.5 dB/km.

Method of making photoconductive coating

Abstract: A method of making a photoconductive coating of the type which comprises a crystalline layer of wholly inorganic material on a suitable substrate for use as an electrophotographic member, said method including the steps of depositing the coating in a vacuum chamber by sputtering with R.F. energy in such a manner that the deposit is crystalline, with the individual crystals oriented substantially vertically, the size of the crystals being uniform and hexagonal in configuration and of the order of 700 to 800 Angstroms in diameter and with a barrier layer coating on the surface that is of extreme resistivity, each crystal acting independently as an independent field domain, the crystal length normal to the substrate being the same as the coating thickness and the deposit evidencing single crystal configuration in response to diffraction pattern measurements. Background gas, including minute measured quantities of oxygen, being introduced during the sputtering and permitted to react with the surface of the sputtered coating.

Sensor detector element for an electrical hygrometer

Abstract: A strictly capacitive sensor for an electrical hygrometer comprises an electrode in the form of a slice of doped silicon supporting a dielectric layer of hygroscopic material which in turn supports a further and permeable electrode, while the surface of the silicon which supports the dielectric layer is oxidized to provide an impermeable barrier layer which prevents the sensor acting resistively.

Cadmium sulfide photovoltaic cell of improved efficiency

Abstract: Cadmium sulfide photovoltaic cells of improved efficiency comprising transparent metal conducting electrode layer, first cadmium semi-conductor layer, short-barrier layer, second cadmium sulfide semi-conductor layer, barrier layer and collecting metal electrode layer.

Age and heat stabilized photovoltaic cells

Abstract: Improved age and heat stabilized photovoltaic solar cells comprising a semiconducting layer, a barrier layer containing the metal M 1 and a stabilizing metal electrode containing two or more metals, one of which is M 1 , such that the tendency for M 1 to diffuse between the electrode and the barrier layer is approximately zero.

Thin metalllayerrhalogenntype cell

Abstract: PURPOSE:To obtain cells with long shelf life by forming an active negative-electrode material on a conductive film by evaporation and the like, and laminating an active positive-electrode material stuck on the other conductive material, with a barrier layer and a separator being intervened CONSTITUTION:A postive-electrode material layer 2 is formed on a conductive plastic film 1 by sticking the material wherein carbon power for electric collectors and a bonding agent are mixed with halogens which are active positive electrode- materials; eg simple halogen substance such as bromide, iodine, and the like, hydrochloric acid of N aromatic heterocyclic compounds such as N bromosuccinic acid imide, and inorganic halogen compounds and the like such as copper bromide and copper iodide On the other hand a thin negative-electrode metal layer 5 of active negative-electrode materials which are silver, copper, zinc, and the like is formed on a conductive plastic film 6 by evaporation and the like A cell is fabricated by laminating and sticking these layers with a separator 3 and a barrier layer 4 being intervened By this method, a very thin cell which can maintain high output power for the long time can be obtained

Layered rubbish dump ground sealing - has waste carbonate as barrier layer and pref. solely industrial waste in others

Abstract: The compensating layer, barrier layer and covering layer make up a sealing assembly for the bottom of a waste disposal area. The barrier layer (3) is made from waste carbonate. The compensating layer (2) can consist of flue dust, while the covering layer (4) is of fire or flue fly-ash. A drainage layer of boiler ash (5) can be sited on top of this. The barrier layer can be derived from cooling tower additive water decarbonisation matter. The layers are pref. 10 - 50 cm. thick. Industrial waste matter is exclusively used.

Coated metal electrode with improved barrier layer and methods of manufacture and use thereof

Abstract: An electrode for use in electrolytic processes comprises a substrate of film-forming metal such as titanium having a porous electrocatalytic coating comprising at least one platinum-group metal and/or oxide thereof possibly mixed with other metal oxides, in an amount of at least about 2 g/m2 of the platinum-group metal(s) per projected surface area of the substrate. Below the coating is a pre- formed barrier layer constituted by a surface oxide film grown up from the substrate. This preformed barrier layer has rhodium and/or iridium as metal or compound incorporated in the surface oxide film during formation thereof in an amount of up to 1 g/m2 (as metal) per projected surface area of the substrate.

Process for producing copper barrier type, nuclear fuel cladding

Abstract: A copper barrier type, nuclear fuel cladding is produced by forming an oxide layer on the inner wall surface of a tube of zirconium or zirconium alloy and then applying electroless copper plating to the oxide layer with a solution containing at least a copper salt, a complexing agent, a reducing agent, and 2,2'-dipyridyl, or further together with polyalkylene glycol as a plating solution. A good adhesiveness is obtained between the copper barrier layer and the oxide layer.

Light-emitting semiconductor

Abstract: On a semiconductor substrate of one conductivity type are disposed successively an active semiconductor layer of said one conductivity type, another active semiconductor layer of the other conductivity type and of a low impurity concentration, and a barrier semiconductor layer of the other conductivity type and a high impurity concentration. This another active semiconductor layer constitutes a main radiative region and light emitting in this radiative region is extracted at the side of the barrier layer. The barrier layer is arranged to form a potential barrier of an appropriate height for those minority carriers in that another active semiconductor layer, and reflects the minority carriers back into the active semiconductor layer. Non-radiative recombination is thereby reduced, and radiative recombination is promoted. Thus, the light-emitting efficiency is improved.

Method of making a photovoltaic cell

Abstract: Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a smooth conductive substrate, preferably comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate, the cell further including a rectifying barrier layer. Preferably, the film is electrodeposited on the substrate surface with specific materials and process conditions. Preferably also, the film or cell is subsequently treated to enhance its barrier layer interface function.

Manufacture of josephson element of oxide superconductor

Abstract: PURPOSE:To make it possible to manufacture the object wherein a barrier layer comprises a very thin film, by changing the sputtering conditions. CONSTITUTION:The Josephson element is manufactured by using the first process by which a first superconductive layer is formed on a substrate, a second process by which the barrier layer is formed on said superconductive layer, and a third process by which a second superconductive layer is formed on said barrier layer. In the first and third processes, is used a target comprising an oxide superconductive material BaPb1-xBixO3 (0.05 Torr. Then heat treatment is performed and the first superconductive layer is formed. In the second process, a target comprising the oxide superconductive material is used, the sputtering is performed in the mixed atmosphere of argon and oxygen wherein the rate of oxygen is 10% or less under atmospheric pressure of 1-10X10 Torr, and the barrier layer is formed. The second superconductive layer is formed by the same method as the formation of the first conductive layer.

Heat-stable electrophotographic image-generating material - contg. photoconductive layer comprising amorphous material with silicon matrix and halogen component atoms

Abstract: Electrophotographic image generation material contains a substrate and a photo-conductive layer, (103), pref. 1-70 mu thick. The photo-conductive layer comprises an amorphous material contg. Si atoms, as matrix, and halogen atoms, as component atoms. A barrier layer can be interposed between the substrate (101) and the photo-conductive layer. The photo-conductive layer can be p-doped with 10 power minus 6 to 10 power minus 3 atom % of Gp. IIIA atoms or n-doped with 10 power minus 8 to 10 power minus 3 atom % of Gp. VA atoms. In a specific embodiment, the photoconductive layer comprises a 1st p- or n-conductive layer zone of amorphous material, contg. Si atoms as matrix and halogen atoms as component atoms; and 2nd n- or p-conductive layer zone of amorphous material, contg. Si atoms as matrix, and an intermediate barrier layer. High quality images can be obtd. The material is heat-stable.

Wear-resistant metallic article

Abstract: WEAR-RESISTANT METALLIC ARTICLE Abstract of the Disclosure A wear-resistant metallic article is provided which com-prises a metallic substrate, a barrier layer of a metal selected from the group consisting of nickel, alloys of nickel, copper and alloys of copper on a surface of the metallic substrate and a layer of wear-resistant material bonded to the substrate, with the wear-resistant material including a mixture of nickel aluminide in a copper base matrix. A method is provided for producing the above-described wear-resistant metallic article which method comprises the steps of (a) providing a metallic substrate, (b) affixing a barrier layer of a metal selected from the group consisting of nickel, alloys of nickel, copper and alloys of copper to a surface of the metallic substrate, (c) applying a layer of wear-resistant material over the surface of the barrier layer, with the wear-resistant material including a mixture of nickel aluminide in a copper base matrix, (d) sintering the so-applied wear-resistant material at a temperature sufficient to cause it to become bonded to the substrate, (e) com-pacting the sintered article an amount sufficient to cause it to have a density near theoretical, and (f) re-sintering the compacted article at a temperature sufficient to cause the wear-resistant material to become bonded together and to the substrate.

An all-plated, low cost contact system for silicon solar cells

Abstract: The plating sequences Pd-Cr-Cu and Pd-Ni-Cu are demonstrated. The surface was sensitized with a 50 A-thick Pd layer obtained from an immersion bath. After 15 min heating at 400 C in N2, a thin barrier layer of either Cr or Ni was deposited from electroless baths operated at temperatures around 90 C. The sintering process was repeated, and a thin copper layer of 500 A was deposited by electroless means. An electrolytic copper bath was used to build the copper layer to 3-4 micron thicknesses. Cells with good I-V curves were obtained, and the all-plated contacts had good adhesion. Preliminary cost estimates show that the process costs approximately 12 cents per watt excluding the cost of the masking procedure.

Laminated structure comprising a nitrile resin barrier layer, a tie layer and a polyolefin layer, and coextrusion process for making said structure

Abstract: A laminated structure comprising (I) a first outer layer composed of a nitrile barrier resin, (II) a second intermediate layer comprising a tie layer and (III) a third outer layer composed of a polyotefin, characterised in that the tie layer comprises a mixture of (1) a nitrile barrier resin (I) (2) a polyolefin, and (3) a halogenated polyolefin. The laminated structure is preferably prepared by a co-extrusion process.

Metallhalogen thin film cell

Abstract: PURPOSE:To prolong a cell life, with a direct contact prevented between both electrode active materials, by providing a barrier layer, including alkaline metal salt of acid or alkaline earth metal salt, between a metal layer of cathode active material and a layer including halonens of anode active material. CONSTITUTION:Between a thin layer of the metal, selected from silver, copper, tin, lead, aluminum, bismuth, tellurium as the cathode active material, and an anode active material, including halognes, for instance, halogen unit like bromin, iodine, etc. or N-halocarbon acid amide and imide like N-bromic succinic acid imide, N- bromoacetoneamide, etc., is provided a barrier layer. The above described barrier layer is used by mixing alkaline metal salt of acid or alkaline earth salt of at least more than one kind selected from among phosphoric acid, phosphorous acid, metaphosphoric acid, pyrophosphoric acid, for instance, phosphoric acid lithium, phosphorous acid potassium, etc. with a conductive polymer bonding agent, and provided between the cathode active material layer and the separator.

Secondary-emission electrode, particularly for a photomultiplier

Abstract: Electrode comprising a metal base (1) and a layer (3) with high secondary emission coefficient, made from an alkaline compound of antimony, notable in that it also comprises an intermediate layer (2) acting as a barrier layer, made from a material selected from the group formed by rhodium, ruthenium, molybdenum, iridium, rhenium, tungsten and palladium. These various layers are preferably deposited electrolytically. These secondary emission electrodes find application in photomultiplier tubes. Application: scintillation measurement, spectrophotometry.

Josephson junction device

Abstract: Josephson junction devices have been made using crystalline silicon as the barrier layer in order to obtain large critical current densities and low device capacitance. However, this has involved thinning a silicon crystal wafer to barrier thickness and forming the layers of superconductor and insulator on both sides. This is a complex and difficult process, and even when successful leads to an extremely fragile device. The present invention turns on the use of certain compounds, in particular niobium nitride, which are superconductive, refractory, and do not react with hydrogen or with silicon or germanium at temperatures at which these semiconductors can be deposited from the vapour phase. A device according to the invention comprises a first superconductive layer (10) preferably of niobium nitride, a barrier layer (12) of silicon or germanium or an alloy of these, and a second superconductive layer (11) which may also be of niobium nitride. Because of the properties of the niobium nitride, the semiconductor may be deposited from the vapour phase by well known methods, either at an elevated temperature so that it is deposited in polycrystalline form, or at room temperature as an amorphous layer which is subsequently annealed at a higher temperature to cause it to re-crystallise. Other compound refractory superconductive materials such as niobium-tin and niobium-germanium may be αtil- ised as an alternative to niobium nitride.

Leakage detection system for hydraulic installation - uses electrode pairs to measure soil resistance and hence moisture content below barrier layer

Abstract: The system for, e.g. a dam or reservoir, monitors the water content of the material beneath the barrier layer, to detect any increase, by measuring its electrical resistance. This is effected via arranging two electrodes within the material one above the other, so that their electrode prongs (p,q) extend perpendicular to one another. The electrodes are coupled to an AC source (S) and the current fed to them is monitored to determine the resistance. Pref. several pairs of electrodes are arranged at spaced points, each pair supplied with a different frequency. The system response threshold can be easily adjusted to compensate the prevalent weather conditions.

Monolithic integrated circuit with back-to-back diode capacitors - has surface layer surrounding diode diffusion areas and connected to epitaxial layer

Abstract: The circuit has two barrier layer capacitors connected in series opposition forming a bipolar capacitance. It has a substrate (2) of a first conduction type on which is an epitaxial layer (3) of a second conduction type. Two separated surface zones (4a, 4b) of the first conduction type are formed in the epitaxial layer with contacts (10, 11) serving as the bipolar capacitor contacts. Both surface zones (4a, 4b) are surrounded by a second surface zone (6) of the first conduction type and conductively connected to the epitaxial layer (3).

Barrier layer capacitor with central, conductive reduction layer - has rectangular body with longitudinal groove on each narrow side, with terminals in grooves coated with solderable metal plating

Abstract: The central, conductive reduction layer is surrounded by a reoxidation layer. The reduction layer reaches a surface of the ceramic capacitor, where it is contacted with a terminal electrode, which surrounds the reoxidation layer up to the vicinity of the surface. The capacitor body (1) is rectangular and has a longitudinal groove (12) on each opposite narrow sides (11). A capacitor terminal (21) is secured in a groove covered with a solderable metal plating (312). The metal plating is conductively connected to a terminal electrode (32) of barrier layer-free type on the narrow side. The second capacitor terminal is secured to the other longitudinal groove also covered with a metal plating (311). The latter reaches over both main surfaces (13) of the body up to the vicinity of the opposite narrow side, where the reduction layer (14) is brought out. The dimensions of the two grooves pref. match the cross sections of the capacitor terminals.