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Showing papers on "Electronic circuit simulation published in 1971"


Journal ArticleDOI
TL;DR: The authors set forth the onset parameters for the Ebers-Moll model and discuss their determination by terminal measurement and by calculation based on the transistor makeup, which limits consideration to the static behavior of transistors operating in the forward-active mode.
Abstract: A method is described that selects, for each transistor in a circuit, the model of least complexity that will give acceptable accuracy. The capability to assess model adequacy derives from a self-consistency test in which the values of currents and voltages computed in a simulation of the circuit behavior are compared with onset parameters, to determine whether these computed values are consistent with the approximations underlying the device models used in the simulation. The onset parameters for a model are the terminal currents and voltages above or below which the model fails to give a satisfactory representation of device behavior. The authors set forth the onset parameters for the Ebers-Moll model and discuss their determination by terminal measurement and by calculation based on the transistor makeup. The paper limits consideration to the static behavior of transistors operating in the forward-active mode.

20 citations


Journal ArticleDOI
TL;DR: Ecap II, a nonlinear dc and transient circuit analysis program, uses a free-format, problem-oriented language for describing circuit parameters and topology and includes a nested model feature that permits the user to store circuit descriptions of devices and subcircuits for subsequent recall and insertion into larger circuits.
Abstract: Ecap II, a nonlinear dc and transient circuit analysis program, uses a free-format, problem-oriented language for describing circuit parameters and topology. Its computation speed is high enough to make the transient analysis of kilobranch nonlinear circuits feasible. The program includes a nested model feature that permits the user to store circuit descriptions of devices and subcircuits for subsequent recall and insertion into larger circuits. Nonlinearities can be specified by means of tables, built-in functions such as the diode equation, and Fortran subroutines. A diagnostic feature pinpoints errors in the input format or inconsistencies in the circuit description.

11 citations


Proceedings ArticleDOI
01 Jan 1971
TL;DR: A method for assessing the adequacy of transistor models in integrated-circuit simulation programs will be offered and the method yields the model of least complexity consistent with required accuracy.
Abstract: A method for assessing the adequacy of transistor models in integrated-circuit simulation programs will be offered. For each transistor in a circuit the method yields the model of least complexity consistent with required accuracy.

3 citations