Showing papers on "Focused ion beam published in 1972"
TL;DR: In this paper, the technique of ion beam sputtering is described and compared with r.f. sputtering, and the advantage of high vacuum during sputtering deposition is important for the deposition of semiconductors and the investigation of film growth by means of in situ observations in the electron microscope.
37 citations
TL;DR: In this article, a microwave ion source with a hydrogen ion beam up to 0.5 keV was presented, where the beam is 85% molecular ions, of which either the diatomic or triatomic component can be maximized by an adjustment of the gas fed to a discharge region.
Abstract: A newly designed microwave ion source has produced with a hydrogen ion beam up to 0.5 A steady state operation with ion energy of 1 keV. The 4 cm diam extraction electrodes are multiple apertures and are arranged in an accel‐decel arrangement. Maximum divergence is 2° from the beam axis. The beam is 85% molecular ions, of which either the diatomic or triatomic component can be maximized by an adjustment of the gas fed to a discharge region. The source is technologically simple, inexpensive, and long lived. The basic concepts underlying the production of ion beams are described.
26 citations
TL;DR: In this paper, an electrostatic ion source for sputter-ion etching of metallic and non-metallic specimens for electron microscopy is described, and a number of optical and scanning electron micrographs of etched surfaces obtained with this source are given.
Abstract: This electrostatic ion source operates as a cold cathode device. It produces a beam of energetic positive ions of, for example, 100 μA/cm2 at a pressure of 5×10−4 Torr when operated at an anode potential of 10 kV. The ion beam is reasonably well collimated and the ions have a broad energy spectrum. It is therefore most suitable for sputter-ion etching of metallic and nonmetallic specimens for electron microscopy. It is relatively simple to construct and entirely reliable in operation. A number of optical and scanning electron micrographs of etched surfaces obtained with this source are given.
19 citations
TL;DR: Ion beam systems and their component parts used for analysis of solid surfaces are reviewed in this article, where the energy range under consideration for the primary beam system is of the order of a few keV to several hundred keV with ion currents up to 1 mA.
Abstract: Ion beam systems and their component parts used for analysis of solid surfaces are reviewed. The energy range under consideration for the primary beam system is of the order of a few keV to several hundred keV with ion currents up to 1 mA. Ion production, acceleration and focusing, analysis, beam handling and detection facilities are discussed together with some examples of complete systems.
3 citations
TL;DR: In this paper, the interaction of electron beam with amorphous semiconductor thin films has been studied with the aim of realizing an electron beam computer memory, and the operational mechanism of such a memory in terms of electronbeam heating for the write process and secondary electron emission for the read process are described.
Abstract: The interaction of electron beam with amorphous semiconductor thin films has been studied with the aim of realizing an electron beam computer memory. The operational mechanism of such a memory in terms of electron beam heating for the write process and secondary electron emission for the read process are described. Some experimental verification of the write and read processes as well as the feasibility of reversible electron beam switching process are reported.
3 citations
2 citations
TL;DR: In this article, two modified forms of a new type of electrostatic ion source are described, which can be used for ion etching either a large number of small specimens or a large area specimen.
Abstract: Two modified forms of a new type of electrostatic ion source are described. The one produces multiple beams of positive ions and in the other a wide ion beam is produced. The sources can be used for ion etching either a large number of small specimens or a large area specimen.
TL;DR: In this paper, a 30 kV ion beam accelerator for erosion studies is described and the results of measurements with two types of ion source are given, which permits a well defined finely focused ion beam to be uniformly scanned across targets for micro-machining or low energy implantation.