Showing papers on "Gallium nitride published in 1980"
TL;DR: In this article, the electron structure of hexagonal GaN has been investigated by means of ESCA, in particular the valence region has been studied and the value of an ionicity parameter for GaN is derived from the electron spectrum.
Abstract: The electron structure of hexagonal GaN has been investigated by means of ESCA. In particular the valence region has been studied. Comparisons with existing pseudopotential band structures are made. The value of an ionicity parameter for GaN is derived from the electron spectrum.
77 citations
Patent•
20 Oct 1980
TL;DR: In this paper, the substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached to the surface of the substrate prior to growing an n-type conductive gallium-nitride layer and a semi-insulating gallium oxide layer thereon.
Abstract: The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive gallium nitride layer and a semi-insulating gallium nitride layer thereon. As a result, high conductivity regions are formed in the semi-insulating layer at positions corresponding to the rough surfaces or the insulating film strip pattern in such a manner that each of the high conductivity region extends from the n-type conductive layer to the upper surface of the semi-insulating layer so as to function as a conductor to be connected to an electrode. In the same manner similar high conductive regions are made along kerf portions in a diode wafer, preventing each diode chip from being damaged on cutting.
57 citations
TL;DR: In this paper, the growth conditions of gallium nitride thin films in an r.f. diode sputtering system were studied in detail and it was found that, at a net sputtering pressure of around 4 × 10−4 Torr, a 70:30 N2: Ar ratio and a sputtering voltage of 0.9kV, gallium-nitride films of the correct stoichiometry and of high resistivity (1013 ω cm) can be obtained.
39 citations
TL;DR: In this paper, the physical and elecrical properties of gallium nitride layers at temperatures in the region of 500°C were investigated and their physical and electrical properties were described.
Abstract: The preparation and the physical and elecrical properties of gallium nitride layers prepared at temperatures in the region of 500° C is recorded
27 citations
Patent•
04 Dec 1980
TL;DR: An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate is described in this paper.
Abstract: An electroluminescent semiconductor device comprising bodies of conductive and resistive crystalline gallium nitride (GaN) which are successively epitaxially deposited on a surface of a heat-treated sapphire substrate, and a body of insulative crystalline gallium nitride epitaxially deposited on the resistive body.
13 citations
Patent•
04 Nov 1980
TL;DR: In this paper, a GaN crystal was grown on a sapphire substrate with high reproducibility by heat treating the substrate in a Ga halogenide atomsphere prior to crystal growth.
Abstract: PURPOSE:To grow a uniform GaN crystal of high quality on a sapphire substrate with high reproducibility by heat treating the substrate in a Ga halogenide atomsphere prior to crystal growth. CONSTITUTION:Sapphire substrate 2 and boat 3 contg. metallic Ga 6 are placed in quartz reaction tube 1. Boat 3 is heated to about 850 deg.C with electric furnace 4, and substrate 2 to about 850 deg.C or above. Purified N2 gas contg. a little HX (X is Cl, Br or I) is introduced from one end 5 of tube 1. The introduced HX gas reacts with Ga 6 in boat 3 to form GaX vapor, which is then carried by N2 gas and activates the surface of substrate 2 to make it fit for GaN growth. By a Ga/HX/NH3/N2 system vapor phase growing method GaN in grown on substrate 2 thus heat treated at about 950 deg.C or above for about 2min or more.
2 citations