Showing papers on "Magnetic semiconductor published in 1977"
24 citations
14 citations
TL;DR: In this article, the spatial variation of polarization of ionic spins around a conduction electron was taken into account in calculating the binding energy of a magnetic polaron, which is plotted in a diagram against an appropriate single variable which characterizes the spatial distribution of spin polarization.
Abstract: The state of a self-trapped electron or a “magnetic polaron” in a magnetic semiconductor is investigated from a new point of view. The spatial variation of polarization of ionic spins around a conduction electron, which is ignored in the existing theories, is taken into account in calculating the binding energy of a magnetic polaron. The binding energy is plotted in a diagram against an appropriate single variable which characterizes the spatial distribution of spin polarization.
4 citations
TL;DR: In this paper, the spectral shapes, intensities, and relative energy shifts of the exciton-related fine structures are discussed in terms of the spin-polarization and spin-disorder-scattering effects of the non-local Bloch electrons.
Abstract: The thermo-reflectance spectra are investigated on EuO, EuS, EuSe, and EuTe, as the spin-order modulation spectroscopy of magnetic semiconductors. The spectral shapes, intensities, and relative energy shifts of the exciton-related fine structures are discussed in terms of the spin-polarization and spin-disorder-scattering effects of the non-local Bloch electrons.
2 citations
Patent•
14 Dec 1977
TL;DR: In this paper, the authors proposed to produce semiconductor with high magnetization and low resistivity by heating zinc-copper-iron system magnetic compound in CS2 atmosphere thereby containing positive sulfur ion in it.
Abstract: PURPOSE:To produce semiconductor with high magnetization and low resistivity by heating zinc-copper-iron system magnetic compound in CS2 atmosphere thereby containing positive sulfur ion in it.
2 citations
TL;DR: In this paper, the authors have taken into account the finite bandwidth, and carriers' statistics (splitting of spin subbands, thermal degeneracy) of heavily doped europium chalcogenides.
Abstract: Indirect exchange in heavily doped europium chalcogenides is calculated in the mean field approximation We have taken into account the finite bandwidth, and carriers' statistics (splitting of spin subbands, thermal degeneracy) Our predictions, both in the paramagnetic and ferromagnetic configurations agree with experimental data on EuO
2 citations