Showing papers on "Mercury cadmium telluride published in 1977"
TL;DR: In this article, the authors derived the optimum volume for a flow-through gas cell used in the gas chromatography-infrared spectroscopy interface (GC-ir) is shown to be equal to the volume of carrier gas between the halfwidth points of the GC peak.
Abstract: The optimum volume for a flow-through gas cell used in the gas chromatography-infrared spectroscopy interface (GC-ir) is shown to be equal to the volume of carrier gas between the half-width points of the GC peak. The optimum length and diameter for lightpipe gas cells for GC fractions separated using ⅛ in. packed columns and support-coated open tubular columns has been calculated for infrared measurements made using a rapid-scanning Fourier transform infrared spectrometer with either a triglycine sulfate or a mercury cadmium telluride detector. A sampling trigger actuated by the inflection points of the GC peak has been shown to be superior to the more usual threshold type of trigger. Expressions for the delay time between actuation of the trigger and initiation of data collection are also derived.
66 citations
Patent•
05 Jul 1977TL;DR: In this article, an n-type mercury cadmium telluride photodiode with an accumulation layer proximate a first surface of the body is described. But the p-type region is formed in the body at the first surface.
Abstract: A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.
15 citations
Patent•
17 Jan 1977TL;DR: In this paper, a silicone rubber adhesive layer was used to bond the first substrate to a second substrate, which was then used to attach the substrate to the second substrate for the same purpose.
Abstract: A mercury cadmium telluride semiconductor device includes an epitaxial layer of mercury cadmium telluride on a first substrate. A silicone rubber adhesive layer bonds the first substrate to a second substrate.
10 citations
Patent•
06 Jan 1977TL;DR: In this article, a method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a temperature of at least 550° C for sufficient time to diffuse the donor materials into the body.
Abstract: A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a temperature of at least 550° C for sufficient time to diffuse the donor material into the body. In a preferred embodiment, the heating is done in the presence of a source of mercury vapor pressure other than the body of semiconductor.
7 citations
09 Nov 1977
TL;DR: A brief review of the basic principles of operation, the performance characteristics, and the state-of-the-art of HgCdTe infrared detectors can be found in this paper.
Abstract: Mercury-cadmium telluride (HgCdTe or Hg1-xCdxTe) has emerged over the past fifteen years as the most widely applicable infrared quantum detecor material available today. Highly sensitive photoconductors, photodiodes and MIS (metal-insulator-semiconductor) detectors, achieving in many cases background-limited performance, are now being used in or being developed for a wide range of DoD and NASA sensor applications over the 2-30 micrometer spectral range. This paper is a brief review of the basic principles of operation, the performance characteristics, and the state-of-the-art of HgCdTe infrared detectors. Emphasis is placed on HgCdTe photoconduc-tors and photodiodes. The paper is intended to provide basic information to those who are or who will be incorporating HgCdTe detectors into modern infrared sensors and systems.
6 citations
09 Nov 1977
TL;DR: In this article, the authors survey and review the present state-of-the-art and assess the ultimate potential of mercury-cadmium telluride (HgCdTe) infrared detector focal plane technology.
Abstract: This paper will survey and review the present state-of-the-art and assess the ultimate potential of mercury-cadmium telluride (HgCdTe) infrared detector focal plane technology.
5 citations
Patent•
09 May 1977TL;DR: In this article, cascaded spin-flip Raman lasers involving alloy semiconductors such as mercury cadmium telluride with different energy gaps or with an energy gap gradient are described.
Abstract: Disclosed are cascaded spin-flip Raman lasers involving alloy semiconductors such as mercury cadmium telluride with different energy gaps or with an energy gap gradient to provide for a relatively large change in frequency for a small change in field and enabling operation at low magnetic field levels where the output power and conversion efficiency are high.
3 citations
TL;DR: In this article, the frequency response of Hg+ implanted Hg1 − xCdxTe photodiodes is discussed, evaluating both the response to fast laser pulses and the 3 dB rolloff of the diode shot-noise spectrum, showed the necessity of adopting a distributed equivalent circuit model taking into account the implanted layer sheet resistance.
2 citations
Patent•
06 Jan 1977TL;DR: In this paper, it was shown that dilated regions of a region of a mercury cadmium telluride with silicon can produce a PN junction when the adjacent region is P-type, and an N-N+ type junction when adjacent regions is N-type.
Abstract: Mercury cadmium telluride is described having a quantity of a silicon dispersed therein in an amount to measurably increase the donor concentration of the mercury cadmium telluride. Silicon has been found to substitute for metal, either mercury or cadmium, in the mercury cadmium telluride crystal. Doping of a region of mercury cadmium telluride with silicon can produce a PN junction when the adjacent region is P-type, and an N-N+ type junction when the adjacent region is N-type.
1 citations
Patent•
06 Jan 1977TL;DR: In this article, the acceptor doped mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase acceptor concentration of the semiconductor.
Abstract: Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.