Showing papers on "Mobility model published in 1985"

Accrual Mobility: Job Mobility in Higher Education through Responsibility Accrual.

Abstract: This article describes a process of career mobility identified as accrual mobility, a form of internal mobility in institutions of higher education. Accrual mobility occurs through evolved jobs in which the employee accrues responsibility and/or knowledge well beyond normal growth in the job. Essentially, a new position is developed, which may then be formally acknowledged by the institution. The result is movement not into fixed positions but into previously nonexistent jobs. Thus, we observe unplanned career mobility that unfolds around individual abilities and developing organizational issues. This process differs from most theories that assume that individuals move within a system of predefined, fixed positions. In addition, studies of mobility have tended to focus on industrial employment and interorganizational mobility. Tailor-made, or idiosyncratic jobs, have long been discussed in the literature on organizations. They have typically been noted, however, as a substantive problem for the organization [9, 20] or as a technical problem for certain types of formal mobility models [17]. In contrast, reports from higher education professionals and administrators suggest a positive role for accrual mobility and evolved jobs. This article seeks first to clarify the process of accrual mobility and then to review variables perceived by organizational members to affect the probability of evolved jobs. In the discussion, some possible implications of the

Semiconductor device simulation using generalized mobility models

Abstract: A method for discretizing the semiconductor transport equations using generalized mobility models is developed as an extension of the Scharfetter-Gummel finite difference approach. The method is sufficiently general to be applicable to nearly arbitrary empirical mobility models (including those for MOS surface effects) and may be used on a variety of mesh types in two or three dimensions. The impact of generalized mobility models on the sparsity of our resulting discrete equations is discussed. Convergence rate of a Newton's method linearization of the nonlinear system of equations is measured and interpreted. Some computational results from a study of short-channel MOSFETs are presented to illustrate the approach.

An accurate mobility model for the I–V characteristics of n-channel enhancement-mode MOSFETs with single-channel boron implantation

Abstract: In this paper we develop an analytical mobility model for the I–V characteristics of n-channel enhancement-mode MOSFETs, in which the effects of the two-dimensional electric fields in the surface inversion channel and the parasitic resistances due to contact and interconnection are included. Most importantly, the developed mobility model easily takes the device structure and process into consideration. In order to demonstrate the capabilities of the developed model, the structure- and process-oriented parameters in the present mobility model are calculated explicitly for an n-channel enhancement-mode MOSFET with single-channel boron implantation. Moreover, n-channel MOSFETs with different channel lengths fabricated in a production line by using a set of test keys have been characterized and the measured mobilities have been compared to the model. Excellent agreement has been obtained for all ranges of the fabricated channel lengths, which strongly support the accuracy of the model.