Showing papers on "NQS published in 2000"
TL;DR: Two amphiphilic aminosaccharide derivatives were investigated as chiral selector additives in capillary electrophoresis, which differed in their enantioselectivity for dansylated amino acids or NQs although the chemical structures were similar.
13 citations
TL;DR: In this article, the parasitic resistances, inductances, and intrinsic parameters of a small-signal FET equivalent circuit model including the non-quasi-static (NQS) charging time-constants associated with the gate and drain charges, respectively, were simultaneously extracted.
Abstract: We present analytic formulas for simultaneously extracting the parasitic resistances, inductances, and the intrinsic parameters of a small-signal FET equivalent circuit model including the non-quasi-static (NQS) charging time-constants associated with the gate and drain charges, respectively. For the NQS equivalent circuit topology considered, there exists a continuum of solutions for the circuit parameters, as a function of the source resistance, giving exactly the same frequency response fit. A multi-bias analysis is used to determine the final source resistance. Realistic results are obtained for power LDMOSFETs despite the very small value of the parasitics in these power RF devices.
9 citations
TL;DR: In this paper, an analytical transient turn-off current model for a type of the conductivity modulation power MOSFET transistors with the extracted structure of the excess carrier is developed.
Abstract: An analytical transient turn-off current model for a type of the conductivity modulation power MOSFET transistors (CMT) with the extracted structure of the excess carrier is developed in the paper. With the non-quasi-static state (NQS) approximation for the excess carrier in the wide base of a low gain pnp transistor included in the CMT the three state equations of the charge, the voltage and the current are solved for the transient turn-off current analysis and ambipolar transport theory in high-level injection is used to evaluate the steady state current. Accounting for the perturbing effect of the carrier concentration redistribution under the condition of base width modulation and the coupling effect between the electron and hole current, the normalized transient current and turn-off time of the device with the extracted structure are obtained and compared with the experimental results.
8 citations
31 Oct 2000
TL;DR: In this paper, the impact of channel width scaling on the transistor y-parameters for the second order NQS model was investigated for MOSFETs with small channel widths.
Abstract: In this paper, we investigate the impact of nonquasi-static (NQS) effects on the small-signal RF behaviour of MOSFETs. We observed that the transistor power gain G/sub Tmax/ is largely overestimated in the quasi-static model, whereas it is accurately predicted using a second order NQS model. Furthermore, we investigated the impact of channel width scaling on the transistor y-parameters for the second order NQS model. Accurate modelling results are obtained for MOSFETs with small channel widths. However, experimental results indicate that the effective gate resistance, stemming from the distributed nature of the MOS gate, tends to be lower than R/sub gate/=WR/sub /spl square///(3L) at frequencies close to or larger than f=1/(R(/spl square/)C/sub ox/W/sup 2/). This was observed for transistors with a 25 /spl mu/m channel width.
5 citations
TL;DR: In this article, a nonlinear transient HBT model is proposed and base push-out and non-quasi-static (NQS) effects are included, based on off-on/on-off time-domain simulations.
Abstract: A nonlinear transient HBT model is proposed. Base push-out and non-quasi-static (NQS) effects are included. Picosecond off-on/on-off time-domain simulations agree well with the measurements.
1 citations