Showing papers on "Optical microcavity published in 1973"
TL;DR: In this paper, two types of waveguides formed in AlxGa1−xAs, GaAs, and Alx Ga1 −xAs epitaxial layers are described, where the first consists of long smooth-walled mesas formed by a masking and etching procedure.
Abstract: Optical transmission properties are described for two types of waveguides formed in AlxGa1−xAs–GaAs–Alx Ga1−xAs epitaxial layers. The first consists of long smooth‐walled mesas formed by a masking and etching procedure and the second are obtained using an additional etching step to selectively etch the GaAs layer. The latter structure is potentially useful in forming active devices such as modulators since this structure is self‐masking for contacting of the top layer by conventional evaporation techniques. The waveguide dimensions are typically 1–30 μm wide, [sine wave] 1 μm thick, and several mm in length. The transmission measurements are quite similar for both types of guides with attenuation as low as [inverted lazy s]2 cm−1 in wide ([inverted lazy s]20 μm) guides but with losses increasing with decreasing width. The loss appears to arise from imperfections and compositional inhomogeneities in the epitaxial layers.
16 citations
Patent•
30 May 1973
TL;DR: A dye laser is provided with an optical pumping means which is introduced within the optical resonator cavity obliquely and hence non-collinearly with respect to the optical path of the cavity as discussed by the authors.
Abstract: A dye laser is provided with an optical pumping means which is introduced within the optical resonator cavity obliquely and hence non-collinearly with respect to the optical path of the cavity.
8 citations