Showing papers on "Polymer solar cell published in 1972"

Junction characteristics of silicon solar cells.

Abstract: Precise values of the reverse saturation currents in solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell and to be responsible for up to 30% loss in efficiency for the average cell in a Jupiter-type environment. Models are given demonstrating the effect of recombination and shunting currents on dark and light characteristics of solar cells.

Short-circuit current in silicon solar cells—Dependence on cell parameters

Abstract: An analytical expression relating the short-circuit current of an n-p silicon solar cell under AM0 illumination to the minority carrier diffusion length of the base region has been derived and compared with previous and new experimental data. The dependence of the short-circuit current upon other solar cell parameters has also been determined analytically. Finally, in the course of systematically reducing the base-region minority-carrier diffusion length by using penetrating electron irradiation, the 1.0-MeV electron damage coefficient for several standard and new types of solar cells has been measured.

Feasibility of low cost silicon solar cells.

Abstract: Future costs of silicon solar cells are projected on the basis of more than a thousand-fold increase in volume If no major application of new manufacturing technology is made, the cost remains excessive for any large scale energy system However, the development of a multiple-ribbon crystal growth process could permit a 300-fold reduction in cell costs to about $375/kW of cell output

Integrally covered silicon solar cells.

Abstract: The electron-beam technique for evaporating dielectric materials onto solar cells has been examined and developed. Titanium oxide cell antireflection coatings have been obtained which compare to silicon monoxide in environmental capabilities and which provide 3 to 4% improvement over SiO for glass covered cells. Evaporation processes have been obtained which provide a 50 to 100 micromil thick transparent (0.5 to 1.0% absorption per mil), low stressed integral cover capable of surviving space type qualification testing. Irradiation with 10 to the 15th power 1-MeV electrons shows 2% darkening, and long term UV irradiation incurs approximately 1.3% cover darkening for 50 micromil thick covers.