A
A. Czerwinski
Researcher at Université catholique de Louvain
Publications - 37
Citations - 279
A. Czerwinski is an academic researcher from Université catholique de Louvain. The author has contributed to research in topics: Annealing (metallurgy) & Scanning electron microscope. The author has an hindex of 9, co-authored 37 publications receiving 258 citations. Previous affiliations of A. Czerwinski include STMicroelectronics.
Papers
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Deep-ultraviolet Raman investigation of silicon oxide: thin film on silicon substrate versus bulk material
TL;DR: In this paper, the authors presented the study of thin silicon oxide film on silicon substrate with application of deep-UV Raman scattering, which reduced the penetration depth of the radiation into silicon substrate about 30 times.
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Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components
TL;DR: In this article, the origin of p-n junction reverse current is investigated by a method based on the analysis of the leakage current activation energy, which can be used for various semiconductor materials and leakage current origins.
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Selective deposition of gold nanoparticles on the top or inside a thin conducting polymer film, by combination of electroless deposition and electrochemical reduction
TL;DR: In this paper, the authors present the procedures allowing for synthesis of the composite systems in which Au nanoparticles are located: (i) only on the surface of the polymer film, (ii) only inside the polymer matrix or (iii) both on the polymer surface and in the polyamide polymer film.
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Analysis of tin whisker growth on lead-free alloys with Ni presence under thermal shock stress
Agata Skwarek,Mariusz Płuska,Jacek Ratajczak,A. Czerwinski,Krzysztof Witek,Dorota Szwagierczak +5 more
TL;DR: In this article, the results of whiskers formation after thermal shocks on various tin-rich materials used in electronics: Sn100, Sn99Cu1, Sn97Cu3,sn99.3Cu0.7Ni, Sn 99.7AgNiGe and Sn99Ag0.3NiGe were compared with those plated directly over a Cu layer.
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Fabrication and properties of GaN-based lasers
Piotr Perlin,T. Świetlik,Lucja Marona,Robert Czernecki,Tadeusz Suski,Michał Leszczyński,Izabella Grzegory,Stanisław Krukowski,Grzegorz Nowak,Grzegorz Kamler,A. Czerwinski,M. Plusa,M. Bednarek,J. Rybiński,S. Porowski +14 more
TL;DR: In this article, the authors discuss the application of almost dislocation-free, high-pressure grown gallium nitride bulk crystals as a substrate for the epitaxy of GaN/InGaN/AlGaN laser diode structures.