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Eddy Simoen
Researcher at Katholieke Universiteit Leuven
Publications - 967
Citations - 10579
Eddy Simoen is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon & Noise (electronics). The author has an hindex of 42, co-authored 943 publications receiving 9712 citations. Previous affiliations of Eddy Simoen include Ghent University & IMEC.
Papers
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Proceedings ArticleDOI
Origin of NBTI variability in deeply scaled pFETs
Ben Kaczer,Tibor Grasser,Ph. J. Roussel,Jacopo Franco,Robin Degraeve,Lars-Ake Ragnarsson,Eddy Simoen,Guido Groeseneken,Hans Reisinger +8 more
TL;DR: In this article, the similarity between Random Telegraph Noise and Negative Bias Temperature Instability (NBTI) relaxation is further demonstrated by the observation of exponentially-distributed threshold voltage shifts corresponding to single-carrier discharges in NBTI transients in deeply scaled pFETs.
Journal ArticleDOI
On the flicker noise in submicron silicon MOSFETs
Eddy Simoen,Cor Claeys +1 more
TL;DR: In this article, an overview of recent theoretical concepts and experimental findings with respect to the flicker or 1/f noise in advanced silicon MOSFETs is given, from which the likely validity range of different models and their possible limitations are confronted with experimental evidence.
Journal ArticleDOI
Explaining the amplitude of RTS noise in submicrometer MOSFETs
TL;DR: In this article, a simple-man's model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented, where the channel resistance modulation for a specific trap can be expressed as a product of the normalized scattering cross section and of the fractional conductivity change.
Journal ArticleDOI
$1/f$ Noise in Drain and Gate Current of MOSFETs With High- $k$ Gate Stacks
Paolo Magnone,Felice Crupi,Gino Giusi,Calogero Pace,Eddy Simoen,Cor Claeys,Luigi Pantisano,D. Maji,V.R. Rao,Purushothaman Srinivasan +9 more
TL;DR: In this paper, the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics is investigated, and both drain-and gate-current noises are evaluated in order to obtain information about the defect content of the gate stack.
Journal ArticleDOI
Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results
S. Brotzmann,Hartmut Bracht,J. Lundsgaard Hansen,A. Nylandsted Larsen,Eddy Simoen,Eugene E. Haller,J. S. Christensen,Peter Werner +7 more
TL;DR: In this article, the diffusion of self-atoms and n-type dopants such as phosphorus, arsenic, and antimony in germanium was studied by means of isotopically controlled multilayer structures doped with carbon.