Memory switching phenomena in thin films of chalcogenide semiconductors

Studies on thin films of lead chalcogenides

Memory switching in amorphous GeSeTl chalcogenide semiconductor films

A review is presented of recent advances in the metal organic chemical vapour deposition (MOCVD) of thin films of group III chalcogenides, including their application for the passivation of GaAs surfaces. The majority of studies involve the deposition of thermodynamic phases of composition ME and M2E3 (MGa, In; ES, Se, Te), however, MOCVD allows for the growth of either high-pressure (tetragonal InS) or non-thermodynamic phases (metastable cubic phases of GaS and InSe). Based on the results to date, a series of goals for molecular control over the structure of deposited films is discussed.

A. F. El-Shazly

Papers

Electrical and switching properties of InSe amorphous thin films

Structural, electrical and optical properties of ternary CdSxSe1−x thin films

Structural and optical properties of amorphous and crystalline InSe thin films