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A. J. Simons
Researcher at Defence Research Agency
Publications - 10
Citations - 517
A. J. Simons is an academic researcher from Defence Research Agency. The author has contributed to research in topics: Porous silicon & Silicon. The author has an hindex of 9, co-authored 10 publications receiving 510 citations.
Papers
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Electroluminescent porous silicon device with an external quantum efficiency greater than 0.1% under CW operation
TL;DR: In this paper, an all solid state, VLSI compatible, electroluminescent device based on porous silicon with an external quantum efficiency greater than 0.1% under CW operation was presented.
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On the origin of blue luminescence arising from atmospheric impregnation of oxidized porous silicon
Leigh T. Canham,A. Loni,P. D. J. Calcott,A. J. Simons,C.L. Reeves,M. R. Houlton,J. P. Newey,K. J. Nash,Timothy I. Cox +8 more
TL;DR: In this paper, a broad blue photoluminescence band with nanosecond decay times gradually appears when heavily oxidized porous silicon is stored in ambient air for prolonged periods.
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Calcium phosphate nucleation on porous silicon: factors influencing kinetics in acellular simulated body fluids
TL;DR: In this paper, the authors demonstrate and discuss how the bioactivity of porous silicon films might be tailored by manipulation of layer microstructure, chemical composition, and surface electrical charge, suggesting that silicon bio-chips might be developed that could rapidly bond in-vivo with living tissue and bone.
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Blue photoluminescence from rapid thermally oxidized porous silicon following storage in ambient air
TL;DR: In this article, the temporal variation of the visible photoluminescence from rapid thermally oxidized porous silicon prepared from n+ substrates was studied, and it was shown that the blue (fast band) emission becomes prevalent only after samples are stored in ambient air.
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The electrical properties of porous silicon produced from n+ silicon substrates
TL;DR: In this paper, the authors compared the current density J vs. voltage V characteristics for metal/PS/n + -Si/aluminium and metal/ps/aluminum devices.