M
Michael J. Uren
Researcher at University of Bristol
Publications - 302
Citations - 9573
Michael J. Uren is an academic researcher from University of Bristol. The author has contributed to research in topics: Gallium nitride & High-electron-mobility transistor. The author has an hindex of 44, co-authored 294 publications receiving 8408 citations. Previous affiliations of Michael J. Uren include Qinetiq & University of St Andrews.
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
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An experimental and theoretical study of the formation and microstructure of porous silicon
TL;DR: In this paper, the formation and properties of porous silicon formed by anodising silicon under a wide range of conditions were investigated and the currentvoltage characteristics of the silicon-hydrofluoric acid system were presented.
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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
TL;DR: In this paper, the authors report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates.
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1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors
TL;DR: In this paper, the authors demonstrate that deviations from 1/f noise behavior found in submicron silicon metaloxide-semiconductor field effect transistors operating at room temperature are the direct result of the decomposition of the 1/F spectrum into its constituent Lorentzian components.
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Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
TL;DR: In this paper, the bulk trap-induced component of current collapse (CC) in GaN/AlGaN heterojunction field effect transistors is studied in drift diffusion simulations, distinguishing between acceptor traps situated in the top and bottom half of the bandgap, with Fe and C used as specific examples.