A
A. Jouve
Researcher at University of Grenoble
Publications - 34
Citations - 485
A. Jouve is an academic researcher from University of Grenoble. The author has contributed to research in topics: Wafer & Interposer. The author has an hindex of 11, co-authored 34 publications receiving 405 citations.
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Proceedings ArticleDOI
Reliable 300 mm Wafer Level Hybrid Bonding for 3D Stacked CMOS Image Sensors
Sandrine Lhostis,Alexis Farcy,E. Deloffre,F. Lorut,Sébastien Mermoz,Yann Henrion,L. Berthier,F. Bailly,Daniel Scevola,Francois Guyader,F. Gigon,C. Besset,S. Pellissier,N. Hotellier,A. L. Le Berrigo,Stephane Moreau,V. Balan,Frank Fournel,A. Jouve,S. Cheramy,M. Arnoux,Bernhard Rebhan,G. A. Maier,L. Chitu +23 more
TL;DR: In this article, the authors presented the morphological and electrical characterizations of a test vehicle using a dual damascene integration for the hybrid bonding level and analyzed the main parameters to assess the bonding interface quality.
Proceedings ArticleDOI
Integration of a temporary carrier in a TSV process flow
Jean Charbonnier,S. Cheramy,David Henry,A. Astier,J. Brun,N. Sillon,A. Jouve,S. Fowler,M. Privett,R. Puligadda,Jürgen Burggraf,Stefan Pargfrieder +11 more
TL;DR: In this paper, a new removable high-temperature adhesive was proposed for reliable TSV processing on 8-inch active wafers with aspect ratios of 1:1 and 2:1.
Proceedings ArticleDOI
Facilitating Ultrathin Wafer Handling for TSV Processing
A. Jouve,S. Fowler,M. Privett,R. Puligadda,David Henry,A. Astier,J. Brun,M. Zussy,N. Sillon,Jürgen Burggraf,Stefan Pargfrieder +10 more
TL;DR: In this article, a new removable high-temperature adhesive* meets all the requirements for reliable through-silicon via (TSV) processing on 8-inch wafers.
Proceedings ArticleDOI
Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness
Joris Jourdon,Sandrine Lhostis,Stephane Moreau,J. Chossat,M. Arnoux,C. Sart,Yann Henrion,P. Lamontagne,Lucile Arnaud,N. Bresson,V. Balan,C. Euvrard,Y. Exbrayat,Daniel Scevola,E. Deloffre,S. Mermoz,A-L. Martin,H. Bilgen,F. Andre,C. Charles,D. Bouchu,Alexis Farcy,S. Guillaumet,A. Jouve,Hélène Fremont,S. Cheramy +25 more
TL;DR: In this paper, a study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives.
Proceedings ArticleDOI
1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy
A. Jouve,V. Balan,N. Bresson,C. Euvrard-Colnat,Frank Fournel,Y. Exbrayat,G. Mauguen,M. Abdel Sater,C. Beitia,Lucile Arnaud,Severine Cheramy,Sandrine Lhostis,Alexis Farcy,S. Guillaumet,S. Mermoz +14 more
TL;DR: In this article, no results have been shown today demonstrating sub-1.5μm pitch copper hybrid bonding feasibility on complete electrical test vehicles [1, 2] as well as commercial products integrating copper to copper interconnection pitch close to 6μm.