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Proceedings ArticleDOI

Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness

TLDR
In this paper, a study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives.
Abstract
Hybrid bonding is a high-density technology for 3D integration but further interconnect scaling down could jeopardize electrical and reliability performance. A study of the influence of hybrid bonding pitch shrinkage on a 3D stacked backside illuminated CMOS image sensor was performed from a process, device performance and robustness perspectives, from $8.8\ \mu\mathrm{m}$ down to $1.44\ \mu \mathrm{m}$ bonding pitches. As a result no defect related to smaller bonding pads was evidenced neither by thermal cycling nor by electromigration, thus validating fine-pitch hybrid bonding robustness and introduction for next generation image sensors.

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Citations
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Journal ArticleDOI

A kinetic model of copper-to-copper direct bonding under thermal compression

TL;DR: In this paper, a surface creep model is presented for analyzing Cu-to-Cu direct bonding under thermal compression, where the driving force is a pressure gradient, which squeezes layers of atoms to fill voids at the bonding interface.
Journal ArticleDOI

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

TL;DR: In this article, the 3D modeling methodology developed for the wafer-to-wafer hybrid bonding (W2W-HB) annealing process has been investigated.
Proceedings ArticleDOI

Characterization of Fine Pitch Hybrid Bonding Pads using Electrical Misalignment Test Vehicle

TL;DR: In this paper, a misalignment test structure was fabricated in a Wafer-to-Wafer (W2W) assembly configuration with a pitch of 3.42µm and 1.44 µm using a very small measurement step for an accurate mis alignment measurement (respectively 45nm and 22nm).
Journal ArticleDOI

Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces

TL;DR: In this paper , the authors adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and low-pressure Cu/SiO2 hybrid bonding.
Proceedings ArticleDOI

Development of face-to-face and face-to-back ultra-fine pitch Cu-Cu hybrid bonding

TL;DR: In this paper , the robust ultra-fine pitch, 1 μm pitch, wafer level face-to-face Cu-Cu hybrid bonding has been realized and the 1.4μm pitch level hybrid bonding was successfully introduced into face to back bonding interface.
References
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Proceedings ArticleDOI

Novel stacked CMOS image sensor with advanced Cu2Cu hybrid bonding

TL;DR: Wang et al. as mentioned in this paper have successfully mass-produced novel stacked back-illuminated CMOS image sensors (BI-CIS), which introduced advanced Cu2Cu hybrid bonding that had developed.
Proceedings ArticleDOI

Cu/SiO 2 hybrid bonding: Finite element modeling and experimental characterization

TL;DR: In this article, a 3D finite element model for the thermal annealing of Cu/SiO 2 hybrid bonded pads is presented, taking into account the dishing effect.
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