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A.K. Sinha
Researcher at Bell Labs
Publications - 6
Citations - 626
A.K. Sinha is an academic researcher from Bell Labs. The author has contributed to research in topics: Thin film & Grain size. The author has an hindex of 5, co-authored 6 publications receiving 616 citations.
Papers
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Journal ArticleDOI
Effect of texture and grain structure on electromigration in Al-0.5%Cu thin films
S. Vaidya,A.K. Sinha +1 more
TL;DR: In this article, the electromigration resistance of Al-0.5%Cu meander lines was found to increase with increasing grain size s and degree of {111} preferred orientation and with decreasing spread σ in the grain size distribution.
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Elastic stiffness and thermal expansion coefficients of various refractory silicides and silicon nitride films
T.F. Retajczyk,A.K. Sinha +1 more
TL;DR: In this paper, the elestic stiffness parameter E f (1−ν f ) and the thermal expansion coefficient αf were obtained for four different silicides (TiSi2, TaSi2 and MoSi2) and for two different nitrides (chemically vapor-deposited Nitrox Si3N4 and r.f. plasma SiN) from stress-temperature measurements on identical films deposited on two different substrate materials.
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The temperature dependence of stresses in aluminum films on oxidized silicon substrates
A.K. Sinha,T. T. Sheng +1 more
TL;DR: In situ measurements were carried out of stress at the AlSiO2 interface at various temperatures (25-500 °C) and for various film thicknesses (0.2-1.6 microm) as mentioned in this paper.
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Thin film diffusion of platinum in gold
TL;DR: In this paper, the authors used electrical resistivity measurements, X-ray diffraction and transmission electron microscope examination of the diffused gold layer to determine the diffusion of Pt in Au films.
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Metallization technology for very-large-scale integration circuits
TL;DR: In this paper, the authors summarized the results of a program whose goals were to develop high conductivity refractory silicide gates, electromigration resistant fine-line aluminum interconnects, small geometry electromigration-resistant contacts to shallow junctions and two-level interconnect systems.