Journal ArticleDOI
The temperature dependence of stresses in aluminum films on oxidized silicon substrates
A.K. Sinha,T. T. Sheng +1 more
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TLDR
In situ measurements were carried out of stress at the AlSiO2 interface at various temperatures (25-500 °C) and for various film thicknesses (0.2-1.6 microm) as mentioned in this paper.About:
This article is published in Thin Solid Films.The article was published on 1978-01-02. It has received 116 citations till now. The article focuses on the topics: Grain growth & Temperature cycling.read more
Citations
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Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history
TL;DR: In this paper, a measurement technique based on the determination of wafer curvature with a laser scanning device is described, and the effects of changes in deposition conditions, film composition, and film structure are discussed.
Journal ArticleDOI
Stresses and deformation processes in thin films on substrates
Mary F. Doerner,William D. Nix +1 more
TL;DR: In this paper, the stresses that develop in thin films on substrates can be detrimental to the reliability of thin film electronic devices, in order to design these devices for improved mechanical reliability, an...
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Mechanical deflection of cantilever microbeams: A new technique for testing the mechanical properties of thin films
TL;DR: In this paper, the Young's moduli and the yield strengths of thin-film materials that comprise the beams are determined using simple beam theory and the load-deflection data, the measured mechanical properties are compared to those obtained by indenting similar thin films supported by their substrate.
Journal ArticleDOI
Separation of film thickness and grain boundary strengthening effects in Al thin films on Si
TL;DR: In this article, the authors measured stress variations with temperature as a function of film thickness and a given grain size in pure Al and Al-0.5% Cu films on Si substrates.
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Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques
TL;DR: In this article, the authors used curvature and submicron indentation measurements to study the strength of thin aluminum and tungsten thin films on silicon substrates and found that the film strength increased with decreasing thickness.
References
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Journal ArticleDOI
Calculated elastic constants for stress problems associated with semiconductor devices
TL;DR: In this paper, a generalized expression for ν has been derived for arbitrary orientations of cubic semiconductor crystals, and the variation of E, ν, and E/(1−ν) for directions within the important {111, {100, and {110} planes is examined.
Book
Crystallography and crystal defects
TL;DR: PERFECT CRYSTALS Lattice Geometry The Stereographic Projection and Point Groups Crystal Structures Tensors IMPERFECT CYSSTALS Strain, Stress and Elasticity Glide Dislocations Dislocation in Crystals Point Defects Twinning Martensitic Transformations Crystal Interfaces Appendices Answers to Problems Subject Index as mentioned in this paper
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Hillock growth in thin films
TL;DR: A model for hillock growth in thin films such as those of lead and tin is developed in this article, where the authors take into account Nabarro Herring diffusion creep as a parallel stress relaxation mechanism and the effects of film thickness on hillock density.