T
T. T. Sheng
Researcher at Bell Labs
Publications - 44
Citations - 1115
T. T. Sheng is an academic researcher from Bell Labs. The author has contributed to research in topics: Silicon & Amorphous solid. The author has an hindex of 17, co-authored 44 publications receiving 1100 citations.
Papers
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Journal ArticleDOI
The Oxidation of Shaped Silicon Surfaces
R. B. Marcus,T. T. Sheng +1 more
TL;DR: In this article, a 30% decrease in oxide thickness at silicon step edges following 900° and 950°C wet oxidation is attributed to the effect of locally compressive intrinsic stress within the oxide on the solubility of oxygen.
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The temperature dependence of stresses in aluminum films on oxidized silicon substrates
A.K. Sinha,T. T. Sheng +1 more
TL;DR: In situ measurements were carried out of stress at the AlSiO2 interface at various temperatures (25-500 °C) and for various film thicknesses (0.2-1.6 microm) as mentioned in this paper.
Journal ArticleDOI
Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiation
J. S. Williams,W. L. Brown,H. J. Leamy,J. M. Poate,J. W. Rodgers,Denis L. Rousseau,G. A. Rozgonyi,J. A. Shelnutt,T. T. Sheng +8 more
TL;DR: In this article, the mechanism for recrystallization is one of thermal solid phase regrowth from the underlying crystalline-amorphous interface, and no implant redistribution is observed.
Journal ArticleDOI
Tungsten metallization for LSI applications
TL;DR: In this paper, it was shown that MOS-LSI devices can be satisfactorily metallized with tungsten thin films using the rf-diode sputtering technique.
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A high‐resolution electron microscopy study of the Si‐SiO2 interface
TL;DR: In this article, the Si-SiO2 interface of a Si-MOSFET on a (911) surface by high-resolution electron microscopy was viewed edge-on parallel to [011] and the Si crystal lattice was directly resolved.