Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

Micrometre-scale silicon electro-optic modulator

We describe a method to estimate the capacity limit of fiber-optic communication systems (or ?fiber channels?) based on information theory. This paper is divided into two parts. Part 1 reviews fundamental concepts of digital communications and information theory. We treat digitization and modulation followed by information theory for channels both without and with memory. We provide explicit relationships between the commonly used signal-to-noise ratio and the optical signal-to-noise ratio. We further evaluate the performance of modulation constellations such as quadrature-amplitude modulation, combinations of amplitude-shift keying and phase-shift keying, exotic constellations, and concentric rings for an additive white Gaussian noise channel using coherent detection. Part 2 is devoted specifically to the "fiber channel.'' We review the physical phenomena present in transmission over optical fiber networks, including sources of noise, the need for optical filtering in optically-routed networks, and, most critically, the presence of fiber Kerr nonlinearity. We describe various transmission scenarios and impairment mitigation techniques, and define a fiber channel deemed to be the most relevant for communication over optically-routed networks. We proceed to evaluate a capacity limit estimate for this fiber channel using ring constellations. Several scenarios are considered, including uniform and optimized ring constellations, different fiber dispersion maps, and varying transmission distances. We further present evidences that point to the physical origin of the fiber capacity limitations and provide a comparison of recent record experiments with our capacity limit estimation.

Capacity Limits of Optical Fiber Networks

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

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Silicon optical modulators

Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates. Today, a silicon chip the size of a fingernail contains nearly 1 billion transistors and has the computing power that only a decade ago would take up an entire room of servers. As the relentless pursuit of Moore's law continues, and Internet-based communication continues to grow, the bandwidth demands needed to feed these devices will continue to increase and push the limits of copper-based signaling technologies. These signaling limitations will necessitate optical-based solutions. However, any optical solution must be based on low-cost technologies if it is to be applied to the mass market. Silicon photonics, mainly based on SOI technology, has recently attracted a great deal of attention. Recent advances and breakthroughs in silicon photonic device performance have shown that silicon can be considered a material onto which one can build optical devices. While significant efforts are needed to improve device performance and commercialize these technologies, progress is moving at a rapid rate. More research in the area of integration, both photonic and electronic, is needed. The future is looking bright. Silicon photonics could provide low-cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects, as well as emerging areas such as optical sensing technology and biomedical applications. The ability to utilize existing CMOS infrastructure and manufacture these silicon photonic devices in the same facilities that today produce electronics could enable low-cost optical devices, and in the future, revolutionize optical communications

http://ieeexplore.ieee.org/iel5/6668/34347/01638290.pdf

Silicon photonics

METAS developed a new 3D coordinate measuring machine (CMM) dedicated to traceable measurement for small parts with nanometre accuracy. The innovative design of the touch probe is based on a parallel kinematic structure of flexure hinges in order to minimize the moving mass and ensure an isotropic low stiffness. This head features very weak probing forces, below 0.5 mN, and supports exchangeable probes down to 0.1 mm diameter. It was combined with a highly accurate positioning stage developed at Philips CFT. The machine features a 90 mm × 90 mm × 38 mm air bearing stage with interferometric position measurement with no Abbe offset. The relevant calibration measurements reported here proudly highlight a repeatability of about 5 nm achieved by our micro-CMM. At the reached level of precision, the shape deviation of the probing sphere becomes a major contribution to the uncertainty. Therefore a calibration method for spheres based on error separation techniques was implemented. The result of roundness measurements on three calibration spheres is also presented. In addition, a scanning measurement procedure was implemented without any loss of accuracy, as attested by a comparison using a roundness measuring machine.

http://iopscience.iop.org/article/10.1088/0957-0233/18/2/S01/pdf

Ultraprecision micro-CMM using a low force 3D touch probe

We present a fully integrated Mach-Zehnder interferometer in silicon-on-insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative design makes this device completely compatible with CMOS technology allowing electronic functions to be integrated on the same substrate. Measurement results, limitations due to thermooptic effect and absorption related to charge injection together with further improvements are discussed.

CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

A Measuring Artefact for true 3D Machine Testing and Calibration

One challenge for today's coordinate metrology is fast and accurate 3D measurements on small objects. Mechanical probing is considered to be simple and accurate but limitations may arise from elastic and plastic deformations at the contact point. Understanding these limits quantitatively will help to avoid surface damage and measurement errors. Static and dynamic forces for single point probings and for scanning measurements were investigated in the present work using a metrology AFM and a micro-CMM. The obtained results were compared with theoretical predictions made by Hertz's theory. We found that the standard forces used by the METAS micro-CMM can be kept below the macroscopic damage threshold. On the other hand, plastic deformation of microscopic contact points which forms at the interface due to the surface roughness of the probe and sample is always present. Additionally, probe contamination by build-up of ductile metal on the probe surface was observed and probe wear on a hard sample was measured.

http://iopscience.iop.org/article/10.1088/0957-0233/18/2/S24/pdf

AFM investigation on surface damage caused by mechanical probing with small ruby spheres

An all-Raman single-band transmission of 5.12 Tb/s (128/spl times/42.7 Gb/s) with 50-GHz channel spacing over 1280 km of standard single-mode fiber is successfully demonstrated. This ultra-high capacity for a spectral efficiency of 0.8 b/s/Hz is achieved by strong optical filtering of transmitted signals. Simulation results and an analysis of the impairment factors to system performance are also presented.

A. Kung

Papers

Ultraprecision micro-CMM using a low force 3D touch probe

CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

A Measuring Artefact for true 3D Machine Testing and Calibration

AFM investigation on surface damage caused by mechanical probing with small ruby spheres

Ultra-high-capacity long-haul 40-Gb/s WDM transmission with 0.8-b/s/Hz spectral efficiency by means of strong optical filtering