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A. Marconi
Researcher at University of Trento
Publications - 24
Citations - 506
A. Marconi is an academic researcher from University of Trento. The author has contributed to research in topics: Light-emitting diode & Electroluminescence. The author has an hindex of 11, co-authored 24 publications receiving 492 citations.
Papers
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Journal ArticleDOI
High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling
TL;DR: In this paper, the authors demonstrate experimentally bipolar (electrons and holes) current injection into silicon nanocrystals in thin nanocrystalline-Si/SiO2 multilayers.
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Low-voltage onset of electroluminescence in nanocrystalline-Si/SiO2 multilayers
Aleksei Anopchenko,A. Marconi,Enrico Moser,S. Prezioso,M. Wang,Lorenzo Pavesi,G. Pucker,P. Bellutti +7 more
TL;DR: In this paper, the power efficiency of a multilayer LED and a single-layer LED was compared under direct current and time-resolved pulsed-current injection schemes.
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Silicon nanocrystals as a photoluminescence down shifter for solar cells
Zhizhong Yuan,Georg Pucker,A. Marconi,Fabrizio Sgrignuoli,Aleksei Anopchenko,Yoann Jestin,Lorenza Ferrario,Pierluigi Bellutti,Lorenzo Pavesi +8 more
TL;DR: In this paper, the effects of a Si-rich silicon oxide (SRO) layer containing silicon nanocrystals as photoluminescence downshifter layer on a conventional Si solar cell were investigated.
Journal ArticleDOI
Light emitting devices based on nanocrystalline-silicon multilayer structure
M. Wang,Aleksei Anopchenko,A. Marconi,Enrico Moser,S. Prezioso,Lorenzo Pavesi,Georg Pucker,Pierluigi Bellutti,Lia Vanzetti +8 more
TL;DR: In this article, the visible-near-infrared light emission properties of nanocrystalline silicon (nc-Si) light emitting devices (LEDs) based on nc-Si/SiO2 multilayer structures were reported.
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Graded-size Si quantum dot ensembles for efficient light-emitting diodes
TL;DR: In this paper, a simple way to engineer the energy band gap of an ensemble of silicon nanocrystal (Si-NC) embedded in SiO2 via thickness/composition profiling of Si-NC multilayers was proposed.