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A. O. Zamchiy
Researcher at Novosibirsk State University
Publications - 39
Citations - 266
A. O. Zamchiy is an academic researcher from Novosibirsk State University. The author has contributed to research in topics: Silicon & Thin film. The author has an hindex of 9, co-authored 32 publications receiving 162 citations. Previous affiliations of A. O. Zamchiy include Russian Academy of Sciences.
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Journal ArticleDOI
A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%
Malte Köhler,Malte Köhler,Manuel Pomaska,Paul Procel,Rudi Santbergen,A. O. Zamchiy,Bart Macco,Andreas Lambertz,Weiyuan Duan,Pengfei Cao,Benjamin Klingebiel,Shenghao Li,Alexander Eberst,Alexander Eberst,Martina Luysberg,Kaifu Qiu,Kaifu Qiu,Olindo Isabella,Friedhelm Finger,Thomas Kirchartz,Thomas Kirchartz,Uwe Rau,Uwe Rau,Kaining Ding +23 more
TL;DR: Kohler et al. as mentioned in this paper proposed a passivating contact based on a double layer of nanocrystalline silicon carbide that overcomes the trade-offs of conductivity, defect passivation and optical transparency.
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Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method
TL;DR: In this paper, a gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented, based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.
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Determination of the oxygen content in amorphous SiOx thin films
TL;DR: The bonding structure and composition of amorphous silicon suboxide (a-SiOx, 0.25 ) have been studied in this paper, where the bonding structure of a-Siox has been analyzed.
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Transparent silicon carbide/tunnel SiO2 passivation for c-Si solar cell front side: Enabling Jsc > 42 mA/cm2 and iVoc of 742 mV
Manuel Pomaska,Malte Köhler,Paul Alejandro Procel Moya,A. O. Zamchiy,Aryak Singh,Do Yun Kim,Olindo Isabella,Miro Zeman,Shenghao Li,Shenghao Li,Kaifu Qiu,Kaifu Qiu,Alexander Eberst,Vladimir Smirnov,Friedhelm Finger,Uwe Rau,Kaining Ding +16 more
TL;DR: In this article, the potential of hot wire chemical vapor deposition (HWCVD) grown microcrystalline silicon carbide (μc-SiC:H(n)) for c-Si solar cells with interdigitated back contacts (IBC) was investigated.