F
Friedhelm Finger
Researcher at Forschungszentrum Jülich
Publications - 342
Citations - 8116
Friedhelm Finger is an academic researcher from Forschungszentrum Jülich. The author has contributed to research in topics: Silicon & Thin film. The author has an hindex of 45, co-authored 340 publications receiving 7675 citations.
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Journal ArticleDOI
Intrinsic microcrystalline silicon: A new material for photovoltaics
O. Vetterl,Friedhelm Finger,R. Carius,P. Hapke,Lothar Houben,Oliver Kluth,Andreas Lambertz,A. Mück,Bernd Rech,Heribert Wagner +9 more
TL;DR: In this paper, microcrystalline silicon (μc-Si:H) prepared by plasma-enhanced chemical vapor deposition (PECVD) has been investigated as material for absorber layers in solar cells.
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Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth
TL;DR: In this paper, the structural properties of a series of films grown under a variation of the dilution of the process gas silane in hydrogen, which induces a transition from highly crystalline to amorphous growth, were investigated.
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Microcrystalline silicon solar cells deposited at high rates
TL;DR: The influence of deposition parameters on the deposition rate and the solar cell performance were comprehensively studied in this paper, as well as the structural, optical, and electrical properties of the resulting solar cells.
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Frequency effects in silane plasmas for plasma enhanced chemical vapor deposition
TL;DR: In this paper, the authors compared the excitation frequency in radio-frequency (RF) plasmas with the 13.56 MHz industrial frequency in the same reactor and presented a comparative study of key discharge parameters such as deposition rates, plasma uniformity, ion impact energy, power transfer efficiency, and powder formation.
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Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge
TL;DR: In this paper, the influence of the plasma excitation frequency on the growth conditions and material properties of microcrystalline silicon prepared by plasma enhanced chemical vapor deposition at low deposition temperature is investigated.