Kaining Ding

TL;DR: In this article, the authors measured and adjusted electrical and optical input parameters by comparing measured and simulated external quantum efficiency, current−voltage characteristic and reflectivity spectra, and provided insight into device properties that are not directly measurable like the spatially resolved absorptance and the voltage-dependent carrier collection.

TL;DR: Kohler et al. as mentioned in this paper proposed a passivating contact based on a double layer of nanocrystalline silicon carbide that overcomes the trade-offs of conductivity, defect passivation and optical transparency.

TL;DR: In this article, the intrinsic amorphous silicon oxide buffer layer in interplay with doped microcrystalline silicon oxide contact layers for silicon heterojunction solar cells using all silicon oxide based functional layers on flat p-type float-zone wafers.

TL;DR: In this paper, the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers on flat p-type wafers was reported.

TL;DR: In this article, the microstructure of doped nc-SiO x :H films via atom probe tomography at the sub-nm scale was revealed for the first time, revealing the three-dimensional distribution of the ncSi network.