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A. Vorob’ev
Publications - 1
Citations - 78
A. Vorob’ev is an academic researcher. The author has an hindex of 1, co-authored 1 publications receiving 71 citations.
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High temperature CVD growth of SiC
Alexsandre Ellison,Jie Zhang,J. Peterson,Anne Henry,Qamar Ul Wahab,J. P. Bergman,Yu.N. Makarov,A. Vorob’ev,A. Vehanen,Erik Janzén +9 more
TL;DR: In this paper, two high temperature CVD techniques, respectively optimised for epitaxial and crystal growth, are presented, and a chimney reactor has been developed for fast epitaxy, carried out at 1700°C, with growth rates ranging from 10 to 25 m mh 1, and a material quality close to conventional CVD processes.