A
Alexsandre Ellison
Researcher at Linköping University
Publications - 52
Citations - 1685
Alexsandre Ellison is an academic researcher from Linköping University. The author has contributed to research in topics: Photoluminescence & Chemical vapor deposition. The author has an hindex of 21, co-authored 52 publications receiving 1619 citations.
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Journal ArticleDOI
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
Qamar Ul Wahab,Alexsandre Ellison,Anne Henry,Erik Janzén,Christer Hallin,J. Di Persio,R. Martinez +6 more
TL;DR: In this paper, the performance of 4H-SiC power devices with high voltage Ni Schottky diodes was investigated and morphological defects and elementary screw dislocations were found to severely limit the performance.
Journal ArticleDOI
Negative- U centers in 4 H silicon carbide
TL;DR: In this paper, the electron-capture cross sections of the acceptor and donor levels of 4H SiC were analyzed and the inverted ordering and temperature dependence studies of the electron capture cross sections were presented.
Journal ArticleDOI
Growth of SiC by Hot-Wall CVD and HTCVD
Olof Kordina,Christer Hallin,Anne Henry,J. P. Bergman,Ivan Gueorguiev Ivanov,Alexsandre Ellison,Nguyen Tien Son,Erik Janzén +7 more
TL;DR: In this paper, a hot-wall type susceptor is proposed for the growth of high-quality epitaxial SiC films, which shows promising results in terms of high quality material grown at high growth rates.
Journal ArticleDOI
High temperature chemical vapor deposition of SiC
Olle Kordina,Christer Hallin,Alexsandre Ellison,Andrey Bakin,Ivan Gueorguiev Ivanov,Anne Henry,Rositza Yakimova,M. Touminen,A. Vehanen,E. Janzén +9 more
TL;DR: In this paper, a high temperature chemical vapor deposition (HTCVD) was used for the epitaxial growth of silicon carbide and the growth rate was shown to be in the order of several tens of μm/h to 0.5 mm/h.
Journal ArticleDOI
In situ substrate preparation for high-quality SiC chemical vapour deposition
Christer Hallin,Fredrik Owman,Per Mårtensson,Alexsandre Ellison,A. O. Konstantinov,Olle Kordina,Erik Janzén +6 more
TL;DR: In situ preparation of 4H and 6H silicon carbide substrate surfaces in hydrogen and hydrogen-propane etching systems has been studied as mentioned in this paper, where the etching of on-axis (0001) 6H-SiC substrates resulted in regular straight terraces and one unit high steps.