J
Jie Zhang
Researcher at Linköping University
Publications - 30
Citations - 492
Jie Zhang is an academic researcher from Linköping University. The author has contributed to research in topics: Epitaxy & Geology. The author has an hindex of 12, co-authored 24 publications receiving 466 citations.
Papers
More filters
Journal ArticleDOI
Negative- U centers in 4 H silicon carbide
TL;DR: In this paper, the electron-capture cross sections of the acceptor and donor levels of 4H SiC were analyzed and the inverted ordering and temperature dependence studies of the electron capture cross sections were presented.
Journal ArticleDOI
High temperature CVD growth of SiC
Alexsandre Ellison,Jie Zhang,J. Peterson,Anne Henry,Qamar Ul Wahab,J. P. Bergman,Yu.N. Makarov,A. Vorob’ev,A. Vehanen,Erik Janzén +9 more
TL;DR: In this paper, two high temperature CVD techniques, respectively optimised for epitaxial and crystal growth, are presented, and a chimney reactor has been developed for fast epitaxy, carried out at 1700°C, with growth rates ranging from 10 to 25 m mh 1, and a material quality close to conventional CVD processes.
Journal ArticleDOI
Epitaxial growth of SiC in a chimney CVD reactor
TL;DR: In this article, a high growth rate (>10mm/h) Chemical Vapour Deposition (CVD) process is investigated in a vertical hot-wall, or ‘chimney’, reactor.
Journal ArticleDOI
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Alexsandre Ellison,Jie Zhang,W. Magnusson,Anne Henry,Qamar Ul Wahab,Peder Bergman,Carl Hemmingsson,Tien Son Nguyen,Erik Janzén +8 more
TL;DR: In this paper, the epitaxial growth of SiC was investigated in a CVD process based on a vertical hot-wall, or "chimney", reactor geometry, carried out at increased temperatures (1650 to 1850 degreesC).
Journal ArticleDOI
Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor
TL;DR: In this paper, the nitrogen doping dependencies on input C/Si ratio, growth temperature and process pressure are investigated under the process conditions leading to growth rates in the range of 15-30µm/h.