A
Abdallah Qteish
Researcher at Yarmouk University
Publications - 63
Citations - 3375
Abdallah Qteish is an academic researcher from Yarmouk University. The author has contributed to research in topics: Pseudopotential & Band gap. The author has an hindex of 24, co-authored 60 publications receiving 3133 citations. Previous affiliations of Abdallah Qteish include Hashemite University & University of Sharjah.
Papers
More filters
Journal ArticleDOI
Optimized and transferable nonlocal separable ab initio pseudopotentials
TL;DR: A systematic procedure for generating optimized nonlocal pseudopotentials by minimizing the high Fourier components of the pseudo-wave-functions with the constraints of normalization and continuity of first and second derivatives of the wave function at the core radius is introduced.
Journal ArticleDOI
First-principles calculations of the electronic properties of silicon quantum wires.
A. J. Read,A. J. Read,Richard J. Needs,Richard J. Needs,K. J. Nash,K. J. Nash,L. T. Canham,L. T. Canham,P. D. J. Calcott,P. D. J. Calcott,Abdallah Qteish,Abdallah Qteish +11 more
TL;DR: Comparison with effective-mass theory shows that the latter is valid for wires wider than 23 A, and first-principles pseudopotential calculations for H-terminated Si wires with thicknesses from 12 to 23 A are performed.
Journal ArticleDOI
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke,Momme Winkelnkemper,Abdallah Qteish,Dieter Bimberg,Jörg Neugebauer,Matthias Scheffler +5 more
TL;DR: In this paper, the authors derived consistent sets of band parameters such as band gaps, crystal field splittings, band-gap deformation potentials, effective masses, and Luttinger and EP parameters for AlN, GaN, and InN in the zinc-blende and wurtzite phases employing many-body perturbation theory in the G0W0 approximation.
Journal ArticleDOI
Combining GW calculations with exact-exchange density-functional theory: an analysis of valence-band photoemission for compound semiconductors
TL;DR: In this article, a quasi-particle energy calculation of the electronic bandstructure as measured by valence-band photoemission for selected II-VI compounds and group III nitrides is presented.
Journal ArticleDOI
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
Patrick Rinke,Matthias Scheffler,Abdallah Qteish,Momme Winkelnkemper,Dieter Bimberg,Jörg Neugebauer +5 more
TL;DR: In this article, the exact exchange density functional theory was applied to the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory.