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Abdelhanin Aassime

Researcher at Université Paris-Saclay

Publications -  64
Citations -  2763

Abdelhanin Aassime is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Qubit & Localized surface plasmon. The author has an hindex of 17, co-authored 62 publications receiving 2556 citations. Previous affiliations of Abdelhanin Aassime include Centre national de la recherche scientifique & Chalmers University of Technology.

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Manipulating the Quantum State of an Electrical Circuit

TL;DR: A superconducting tunnel junction circuit that behaves as a two-level atom that can be programmed with a series of microwave pulses and a projective measurement of the state can be performed by a pulsed readout subcircuit is designed and operated.
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Radio-frequency single-electron transistor as readout device for qubits: charge sensitivity and backaction.

TL;DR: It is found that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.
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Giant coupling effect between metal nanoparticle chain and optical waveguide.

TL;DR: It is demonstrated that the optical energy carried by a TE dielectric waveguide mode can be totally transferred into a transverse plasmon mode of a coupled metal nanoparticle chain, which opens the way to nanometer scale devices based on localized plasmons in photonic integrated circuits.
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NMR-like control of a quantum bit superconducting circuit.

TL;DR: Experiments are reported on in which the state of a qubit circuit, the quantronium, is efficiently manipulated using methods inspired from nuclear magnetic resonance (NMR): multipulse sequences are used to perform arbitrary operations, to improve their accuracy, and to fight decoherence.
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Radio-frequency single-electron transistor: Toward the shot-noise limit

TL;DR: In this paper, an aluminum single-electron transistor was fabricated and characterized at frequencies up to 10 MHz by measuring the reflected signal from a resonant tank in which the transistor is embedded.