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Adel Bousseksou

Researcher at Université Paris-Saclay

Publications -  65
Citations -  586

Adel Bousseksou is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 14, co-authored 61 publications receiving 492 citations. Previous affiliations of Adel Bousseksou include University of Paris-Sud & Centre national de la recherche scientifique.

Papers
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Journal ArticleDOI

Semiconductor surface plasmon sources.

TL;DR: Electrical generation of surface-plasmon polaritons is reported by reproducing the analogue in the near field of the slit-doublet experiment, in a device which includes all the building blocks required for a fully integrated plasmonic active source: an electrical generator of SPPs, a coupler, and a passive metallic waveguide.
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Room-temperature continuous-wave laser operation of electrically-pumped 1.55 [micro sign]m VECSEL

TL;DR: In this paper, the authors presented a report on room-temperature (RT) continuous-wave (CW) laser emission at 155 /spl mu/m of an all-inP-based electrically-pumped vertical external-cavity surface-emitting laser (EP-VECSEL) with threshold currents of 14 kA/cm/sup 2/ and output powers of up to 03 mW.
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Quantum well infrared photo-detectors operating in the strong light-matter coupling regime

TL;DR: In this paper, a quantum well mid-infrared photo-detectors operating in the strong light-matter coupling regime has been reported to elucidate the elusive problem in inter-band polaritonics of the injection of electrons (single-particle fermionic states) into polaritonic modes (bosonic excitations) by reversing the perspective and focusing on the electron extraction.
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Excitons bound by photon exchange

TL;DR: In this article, it was shown that two charged particles can be bound by the exchange of transverse photons, which can be used as a tool in quantum material engineering, tuning electronic properties of semiconductor heterostructures beyond those permitted by mere crystal structures.
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A semiconductor laser device for the generation of surface-plasmons upon electrical injection.

TL;DR: The direct proof of surface-plasmon generation is obtained with apertureless near-field scanning optical microscopy, which detects the presence of an intense, evanescent electric field above the device metallic surface upon electrical injection.