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Adrian Powell
Researcher at Cree Inc.
Publications - 93
Citations - 2916
Adrian Powell is an academic researcher from Cree Inc.. The author has contributed to research in topics: Silicon carbide & Wafer. The author has an hindex of 31, co-authored 93 publications receiving 2808 citations. Previous affiliations of Adrian Powell include IBM.
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Patent
Micropipe-free silicon carbide and related method of manufacture
Cem Basceri,Khlebnikov Yuri,Igor Khlebnikov,Cengiz Balkas,Murat N. Silan,Hudson Mcdonald Hobgood,Calvin H. Carter,balakrishna Vijay,Robert Tyler Leonard,Adrian Powell,Valeri T. Tsvetkov,Jason Ronald Jenny +11 more
TL;DR: In this paper, the SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the system including the source material, reaction crucibility, and seed holder are substantially free from unintentional impurities.
Patent
Low micropipe 100 mm silicon carbide wafer
TL;DR: In this paper, a high quality single crystal wafer of SiC was disclosed having a diameter of at least about 100mm and a micropipe density of less than about 25 cm-2.
Patent
Three inch silicon carbide wafer with low warp, bow, and TTV
Adrian Powell,William H Brixius,Robert Tyler Leonard,Davis Andrew McClure,Michael P. Laughner +4 more
TL;DR: In this paper, a high quality single crystal wafer of SiC was disclosed, which has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than 2.0 μm.
Journal ArticleDOI
Stability of strained Si1−yCy random alloy layers
TL;DR: In this paper, the metastable critical thickness of the Si1−yCy alloys has been investigated and two distinct relaxation regimes for the strained layers were found, low and high mismatch regions where relaxation occurs by the creation of 60° dislocations and micro...
Proceedings ArticleDOI
State of the Art 10 kV NMOS Transistors
Mrinal K. Das,Robert Callanan,Doyle Craig Capell,Brett Hull,F. Husna,Jim Richmond,Michael J. O'Loughlin,Michael James Paisley,Adrian Powell,Qingchun Zhang +9 more
TL;DR: In this paper, the authors developed the largest 10 kV MOSFET to date and the first 10kV n-IGBT capable of flowing 10 A and 4 A, respectively, with very low on- resistances.