A
Adrian Powell
Researcher at Cree Inc.
Publications - 93
Citations - 2916
Adrian Powell is an academic researcher from Cree Inc.. The author has contributed to research in topics: Silicon carbide & Wafer. The author has an hindex of 31, co-authored 93 publications receiving 2808 citations. Previous affiliations of Adrian Powell include IBM.
Papers
More filters
Journal ArticleDOI
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
Jason Ronald Jenny,St. G. Müller,Adrian Powell,V. F. Tsvetkov,Hudson Mcdonald Hobgood,R.C. Glass,C. H. Carter +6 more
TL;DR: In this paper, the growth of high-purity, semi-insulating (HPSI) 4H-SiC crystals has been achieved using the seeded-sublimation growth technique.
Journal ArticleDOI
Bulk crystal growth, epitaxy, and defect reduction in silicon carbide materials for microwave and power devices
TL;DR: In this paper, the carbon vacancy is the dominant deep-level trapping state, and the cross-wafer activation energies derived from temperature-dependent resistivity are discussed in terms of capability and applications.
Journal ArticleDOI
Relaxation of SiGe thin films grown on Si/SiO2 substrates
TL;DR: In this paper, it is shown that the Si/SiGe bilayer behaves as a free-floating foil constrained to remain flat by the substrate, even at temperatures as low as 700°C.
Journal ArticleDOI
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
Stephan G. Müller,M.F. Brady,William H Brixius,R.C. Glass,H. McD. Hobgood,Jason Ronald Jenny,R.T. Leonard,D.P. Malta,Adrian Powell,Valeri F. Tsvetkov,S.T. Allen,John W. Palmour,Calvin H. Carter +12 more
TL;DR: In this paper, the authors show the progression in the development of semi-insula ti g SiC grown by the sublimation technique from extrinsically doped material to high purity semi-insulating (HPSI) 4H-SiC bulk crystals of 2-inch and 3-inch diameter without re sorting to the intentional introduction of elemental deep level dopants such as vanadium.
Journal ArticleDOI
High-purity semi-insulating 4H-SiC for microwave device applications
Jason Ronald Jenny,D.P. Malta,St. G. Müller,Adrian Powell,V. F. Tsvetkov,H. McD. Hobgood,R.C. Glass,C. H. Carter +7 more
TL;DR: In this article, high-purity, semi-insulating (HPSI) 4H-SiC crystals with diameters up to 75 mm have been grown by the seeded sublimation technique without the intentional introduction of elemental deep-level dopants, such as vanadium.