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Akira Fujishima

Researcher at University of Tokyo

Publications -  581
Citations -  26134

Akira Fujishima is an academic researcher from University of Tokyo. The author has contributed to research in topics: Photocatalysis & Electrode. The author has an hindex of 82, co-authored 581 publications receiving 24846 citations. Previous affiliations of Akira Fujishima include Dresden University of Technology.

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Large-scale fabrication of Ag nanoparticles in PVP nanofibres and net-like silver nanofibre films by electrospinning

TL;DR: The weight ratios of AgNO(3) to PVP determined the types of morphologies, from Ag nanoparticles to silver nanofibre film, which may find some potential application in the design of new composite materials in the dielectric and electronics areas.
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Photoelectrochemical reduction of co2 in a high-pressure co2 + methanol medium at p-type semiconductor electrodes

TL;DR: In this article, the adsorbed radical anion complex reaches high coverages at high CO2 pressures and is responsible for both the high current efficiencies observed for CO production and the low values observed for H2 evolution.
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Pt-implanted boron-doped diamond electrodes and the application for electrochemical detection of hydrogen peroxide

TL;DR: In this paper, a Pt-modified diamond electrode was fabricated for electroanalytical applications by implantation method at 750 keV Pt 2+ with a dose of 5 × 10 14 cm − 2.
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Electroanalytical application of modified diamond electrodes

TL;DR: In this paper, metal-modified diamond electrodes were fabricated by using ion implantation method for electroanalytical applications for glucose oxidation in alkaline media by using cyclic voltammetry and flow injection analysis.
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The Investigation of Current Doubling Reactions on Semiconductor Photoelectrodes by Temperature Change Measurements

TL;DR: In this paper, the current doubling effects in photoanodic reactions of or on n-type semiconductor electrodes (,, and ) and the photocathodic reaction of on a p type semiconductor were studied by the measurement of the temperature change of a semiconductor electrode surface.