An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Organic light-emitting device

An organic light emitting display apparatus that has high (or improved) contrast and/or impact resistance. The organic light emitting display apparatus includes: a substrate; an organic light emitting device on the substrate to display an image; a sealing member on the organic light emitting device; a semitransparent film on a surface of the sealing member facing away from the organic light emitting device to transmit a portion of external light and to reflect another portion of the external light; a passivation film on the semitransparent film to protect the semitransparent film; and a transmissive black layer between the sealing member and the organic light emitting device to increase contrast, wherein the semitransparent film has a refractive index greater than that of the passivation film.

Organic light emitting display apparatus

A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor device

An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a stretchable substrate, a thin film transistor (TFT) formed over the stretchable substrate and including a plurality of electrodes, an OLED electrically connected to the TFT and including a plurality of electrodes, and a plurality of interconnection lines connected to the electrodes of the OLED and the TFT. At least one of the interconnection lines is configured to move in a stretching direction and rotate an electrode selected from the electrodes of the OLED and the TFT connected to the at least one interconnection line.

Organic light-emitting diode display

A II-VI laser diode lifetime of >140 h at 40/spl deg/C, as well as /spl sim/400 h at 20/spl deg/C, has been achieved for a ZnCdSe-ZnSSe-ZnMgSSe separate-confinement heterostructure laser diode under continuous-wave operation with a constant output power of 1 mW. Progress has been made towards increasing the basic reliability of ZnMgSSe-based wide bandgap laser diodes by reducing point defects.

Significant progress in II-VI blue-green laser diode lifetime

It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

Display device and manufacturing method of display device

An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

Display Device and Method for Manufacturing the Same

Blue-green laser diodes exhibiting continuous-wave operation during hundreds-of-seconds have been fabricated. This structure is a ZnCdSe/ZnSSe/ZnMgSSe separate-confinement heterostructure with low dislocation density of ~105 cm-2 in the n-ZnMgSSe cladding layer. The use of a GaAs buffer layer has lead to the decrease of dislocation density for laser-diodes, with which we have observed CW operation up to 80° C, that showed the feasibility of ZnCdSe/ZnSSe/ZnMgSSe SCH laser-diodes.

ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer

PROBLEM TO BE SOLVED: To provide a sealing structure capable of preventing intrusion of external materials such as water and oxygen causing deterioration and obtaining sufficient reliability in a display using an organic or inorganic electroluminescent element. SOLUTION: A display device is featured to obtain the sufficient reliability by suppressing deterioration of the element by blocking the intrusion of water from an inter-layer insulating film by focusing attention on water permeability of the insulating film. COPYRIGHT: (C)2005,JPO&NCIPI

Masaharu Nagai

Papers

Significant progress in II-VI blue-green laser diode lifetime

Display device and manufacturing method of display device

Display Device and Method for Manufacturing the Same

ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer

Display device and producing method therefor