Journal ArticleDOI
100h II-VI blue-green laser diode
TLDR
By reducing the dark-spot density to <3/spl times/10/sup 3/ cm/sup -2, a device lifetime exceeding 100 h has been obtained for a ZnCdSe-ZnSSe -ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW as mentioned in this paper.Abstract:
By reducing the dark-spot density to <3/spl times/10/sup 3/ cm/sup -2/, device lifetime exceeding 100 h has been obtained for a ZnCdSe-ZnSSe-ZnMgSSe single quantum well separate-confinement heterostructure laser diode (LD) under room temperature continuous-wave operation with a constant light output power of 1 mW The threshold current density is 533 A/cm/sup 2/ and the lasing wavelength is 5147 nm Considering the dark-spot density, we have concluded that the failure of this LD is not caused by degradation from macroscopic defects such as stacking faults, but by recombination enhanced defect reactionread more
Citations
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Journal ArticleDOI
Group III nitride semiconductors for short wavelength light-emitting devices
J.W. Orton,C. T. Foxon +1 more
TL;DR: In this article, the authors provide a detailed review of the state-of-the-art properties of the group III nitrides (AlN, GaN and InN).
Journal ArticleDOI
One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications
TL;DR: A comprehensive review on the recent advances in the synthesis, properties and optoelectronic applications of one-dimensional II-VI nanostructures can be found in this paper.
Journal ArticleDOI
Cr2+-doped II–VI materials for lasers and nonlinear optics
TL;DR: In this article, material, spectroscopic, laser and nonlinear optical properties of wide-band Cr 2+ -doped II-VI materials have been reviewed and a considerable modification of the mode-locking techniques and reconsideration of the existing theories are discussed.
Journal ArticleDOI
High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Yasunobu Sugimoto,Hiroyuki Kiyoku +7 more
TL;DR: In this article, the continuous-wave operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature with a high output power of 50 mW, a high operating temperature of 100° C and a long lifetime of 300 hours.
Journal ArticleDOI
Significant progress in II-VI blue-green laser diode lifetime
TL;DR: In this article, a II-VI laser diode lifetime of >140 h at 40/spl deg/C, as well as /spl sim/400 h at 20/spl dc/C with a constant output power of 1 mW was achieved for a ZnCdSe-ZnSSe-znMgSSe separate-confinement heterostructure diode under continuous-wave operation.
References
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Journal ArticleDOI
Structural study of defects induced during current injection to II–VI blue light emitter
TL;DR: In this paper, structural studies of nonluminescent areas developed by current injection in ZnMgSSe alloy-based II-VI blue light emitting diodes by electroluminescence topography and transmission electron microscopy were carried out.
Journal ArticleDOI
On degradation of ZnSe‐based blue‐green diode lasers
M. Hovinen,J. Ding,A. Salokatve,Arto V. Nurmikko,G. C. Hua,D. C. Grillo,L. He,Jung Han,M. D. Ringle,Robert L. Gunshor +9 more
TL;DR: In this paper, the degradation mechanism of ZnMgSSe, ZnSSe/ZnCdSe separate confinement heterostructure laser diodes is studied under continuous wave and pulsed operation at room temperature.